1N5819 STMicroelectronics, 1N5819 Datasheet
1N5819
Specifications of 1N5819
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1N5819 Summary of contents
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... Critical rate of rise of reverse voltage dPtot thermal runaway condition for a diode on its own heatsink dTj Rth July 2003 - Ed 150°C 0.45 V Parameter T = 125° 0 Sinusoidal tp = 1µ 25°C 1N581x DO41 Value 1N5817 1N5818 1N5819 1200 1200 900 - 150 150 10000 Unit °C °C V/µs 1/5 ...
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... T 0.1 =tp/T tp 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Fig. 2-2: Average forward current versus ambient temperature ( =0.5) (1N5819). IF(av)(A) 1.2 1.0 0.8 0.6 0.4 0.2 =tp/T 0.0 0 100 125 ...
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... Fig. 4: Normalized avalanche power derating versus junction temperature. P ARM p P ARM 1.2 1 0.8 0.6 0.4 0 100 1000 Fig. 5-2: current versus overload duration (maximum values) (1N5819). IM( Ta=25°C 4 Ta=75°C 3 Ta=100° 1E-1 1E+0 1E-3 Fig. 7: Junction capacitance versus reverse voltage applied (typical values) ...
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... Fig. 10: Non repetitive surge peak forward current versus number of cycles. IFSM( Number of cycles 4/5 Fig. 8-2: Reverse leakage current versus reverse voltage applied (typical values) (1N5819). IR(mA) 1E+1 1N5818 1E+0 1E-1 1E-2 1E Fig. 9-2: Forward voltage drop versus forward current (typical values) (1N5819). IFM(A) 10 ...
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... No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. ...