1N5818 STMicroelectronics, 1N5818 Datasheet - Page 4

• Manufacturer Part Number: 1N5818
• Description: DIODE SCHOTTKY 30V 1A DO-41
• Manufacturer: STMicroelectronics

Specifications of 1N5818

• Voltage - Forward (vf) (max) @ If: 500mV @ 1A
• Voltage - Dc Reverse (vr) (max): 30V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 500µA @ 30V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Product: Schottky Diodes
• Peak Reverse Voltage: 30 V
• Forward Continuous Current: 1 A
• Max Surge Current: 25 A
• Configuration: Single
• Forward Voltage Drop: 0.5 V
• Maximum Reverse Leakage Current: 500 uA
• Operating Temperature Range: + 150 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-4548-2; 497-4548-2; 497-4548-3

1N581x
Fig. 8-1: Reverse leakage current versus reverse
voltage applied (typical values) (1N5817/1N5818).
4/5
1E+1
1E+0
Fig. 9-1: Forward voltage drop versus forward
current (typical values) (1N5817/1N5818).
10.00
Fig. 10: Non repetitive surge peak forward current
versus number of cycles.
30
25
20
15
10
1E-1
1E-2
1E-3
1.00
0.10
0.01
5
0
1
IFSM(A)
0.0
0
IR(mA)
IFM(A)
Tj=25°C
0.1
Tj=125°C
Tj=100°C
Tj=125°C
5
0.2
10
Number of cycles
0.3
10
1N5817
VFM(V)
0.4
Tj=25°C
Tj=100°C
VR(V)
15
0.5
F=50Hz
100
0.6
20
Tj initial=25°C
0.7
25
1N5818
0.8
1000
0.9
30
Fig. 8-2: Reverse leakage current versus reverse
voltage applied (typical values) (1N5819).
Fig. 9-2: Forward voltage drop versus forward
current (typical values) (1N5819).
1E+1
1E+0
10.00
1E-1
1E-2
1E-3
1.00
0.10
0.01
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
0
IR(mA)
IFM(A)
Tj=125°C
Tj=125°C
Tj=25°C
5
Tj=100°C
10
15
Tj=25°C
VFM(V)
Tj=100°C
VR(V)
20
30
35
40