1N5818 STMicroelectronics, 1N5818 Datasheet - Page 4
![DIODE SCHOTTKY 30V 1A DO-41](/photos/5/36/53643/497-do-41__axial_series_sml.jpg)
1N5818
Manufacturer Part Number
1N5818
Description
DIODE SCHOTTKY 30V 1A DO-41
Manufacturer
STMicroelectronics
Datasheet
1.1N5817.pdf
(5 pages)
Specifications of 1N5818
Voltage - Forward (vf) (max) @ If
500mV @ 1A
Voltage - Dc Reverse (vr) (max)
30V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
500µA @ 30V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Through Hole
Package / Case
DO-204AL, DO-41, Axial
Product
Schottky Diodes
Peak Reverse Voltage
30 V
Forward Continuous Current
1 A
Max Surge Current
25 A
Configuration
Single
Forward Voltage Drop
0.5 V
Maximum Reverse Leakage Current
500 uA
Operating Temperature Range
+ 150 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-4548-2
497-4548-2
497-4548-3
497-4548-2
497-4548-3
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1N581x
Fig. 8-1: Reverse leakage current versus reverse
voltage applied (typical values) (1N5817/1N5818).
4/5
1E+1
1E+0
Fig. 9-1: Forward voltage drop versus forward
current (typical values) (1N5817/1N5818).
10.00
Fig. 10: Non repetitive surge peak forward current
versus number of cycles.
30
25
20
15
10
1E-1
1E-2
1E-3
1.00
0.10
0.01
5
0
1
IFSM(A)
0.0
0
IR(mA)
IFM(A)
Tj=25°C
0.1
Tj=125°C
Tj=100°C
Tj=125°C
5
0.2
10
Number of cycles
0.3
10
1N5817
VFM(V)
0.4
Tj=25°C
Tj=100°C
VR(V)
15
0.5
F=50Hz
100
0.6
20
Tj initial=25°C
0.7
25
1N5818
0.8
1000
0.9
30
Fig. 8-2: Reverse leakage current versus reverse
voltage applied (typical values) (1N5819).
Fig. 9-2: Forward voltage drop versus forward
current (typical values) (1N5819).
1E+1
1E+0
10.00
1E-1
1E-2
1E-3
1.00
0.10
0.01
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
0
IR(mA)
IFM(A)
Tj=125°C
Tj=125°C
Tj=25°C
5
Tj=100°C
10
15
Tj=25°C
VFM(V)
Tj=100°C
VR(V)
20
30
35
40