1N6263 STMicroelectronics, 1N6263 Datasheet
1N6263
Manufacturer Part Number
1N6263
Description
DIODE SCHOTTKY 60V 15MA DO-35
Manufacturer
STMicroelectronics
Specifications of 1N6263
Voltage - Forward (vf) (max) @ If
1V @ 15mA
Voltage - Dc Reverse (vr) (max)
60V
Current - Average Rectified (io)
15mA (DC)
Current - Reverse Leakage @ Vr
200nA @ 50V
Diode Type
Schottky
Speed
Small Signal =< 200mA (Io), Any Speed
Capacitance @ Vr, F
2.2pF @ 0V, 1MHz
Mounting Type
Through Hole
Package / Case
DO-204AH, DO-35, Axial
Product
Schottky Diodes
Peak Reverse Voltage
60 V
Forward Continuous Current
0.015 A
Max Surge Current
0.05 A
Configuration
Single
Forward Voltage Drop
1 V
Maximum Reverse Leakage Current
0.2 uA @ 50 V
Operating Temperature Range
- 65 C to + 200 C
Mounting Style
Through Hole
Capacitance, Junction
2.2 pF
Current, Forward
15 mA
Current, Reverse
0.2 μA
Current, Surge
50 mA
Package Type
DO-35
Primary Type
Schottky Barrier
Speed, Switching
Ultrafast
Temperature, Junction, Maximum
+200 °C
Temperature, Operating
-65 to +200 °C
Voltage, Forward
1 V
Voltage, Reverse
60 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-2508-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
1N6263W-7-F
Manufacturer:
DIODES
Quantity:
13 500
October 2001 - Ed: 1B
DESCRIPTION
Metal to silicon junction diode featuring high break-
down, low turn-on voltage and ultrafast switching.
Primarly intended for high level UHF/VHF detec-
tion and pulse application with broad dynamic
range.
ABSOLUTE RATINGS (limiting values)
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
* On infinite heatsink with 4mm lead length
** Pulse test: t
Matched batches available on request. Test conditions (forward voltage and/or capacitance) according to customer specification.
THERMAL RESISTANCE
DYNAMIC CHARACTERISTICS
Symbol
Symbol
Symbol
Symbol
V
R
V
I
I
T
V
FSM
R
RRM
T
F
I
T
th(j-a)
stg
C
F
BR
L
* *
j
* *
®
p
Repetitive Peak Reverse Voltage
Forward Continuous Current*
Surge non Repetitive Forward Current*
Storage and Junction Temperature Range
Maximum Lead Temperature for Soldering during 10s at 4mm
from Case
T
T
T
T
300 s
Junction-ambient*
T
T
amb
amb
amb
amb
amb
amb
= 25°C
= 25 C
= 25 C
= 25 C
= 25°C
= 25 C
2%.
I
I
I
V
V
I
R
F
F
F
Test Conditions
R
Test Conditions
Test Conditions
R
= 1mA
= 15mA
= 10 A
= 5mA
= 50V
= 0V
Parameter
SMALL SIGNAL SCHOTTKY DIODE
f = 1MHz
Krakauer Method
T
t
p
a
= 25°C
1s
Min.
Min.
60
DO-35
- 65 to 200
- 65 to 200
Value
Value
Typ.
Typ.
230
400
60
15
50
1N6263
Max.
Max.
0.41
100
0.2
2.2
1
Unit
Unit
Unit
Unit
mA
mA
C/W
°C
pF
ps
V
V
V
C
A
1/3
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1N6263 Summary of contents
Page 1
... SMALL SIGNAL SCHOTTKY DIODE Parameter T = 25° Test Conditions Test Conditions 1mA 15mA 50V R Test Conditions 1MHz 5mA Krakauer Method F 1N6263 DO-35 Value Unit ° 200 - 65 to 200 230 C Value Unit 400 C/W Min. Typ. Max. Unit 0.2 A Min. Typ. ...
Page 2
... Fig. 1: Forward current versus forward voltage (typical values). Fig. 3: Reverse current versus ambient tempera- ture. 2/3 Fig. 2: Capacitance C versus reverse applied voltage V (typical values). R Fig. 4: Reverse current versus continuous re- verse voltage (typical values). ...
Page 3
... Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. REF STMicroelectronics GROUP OF COMPANIES http://www.st.com DIMENSIONS Millimeters Inches Min. Max. Min. Max. 3.05 4.50 0.120 0.177 1.53 2.00 0.060 0.079 28.00 1.102 0.458 0.558 0.018 0.022 1N6263 3/3 ...