STPS1H100U STMicroelectronics, STPS1H100U Datasheet - Page 3
![DIODE SCHOTTKY 100V 1A SMB](/photos/5/36/53650/497-do-214aa_sml.jpg)
STPS1H100U
Manufacturer Part Number
STPS1H100U
Description
DIODE SCHOTTKY 100V 1A SMB
Manufacturer
STMicroelectronics
Datasheet
1.STPS1H100U.pdf
(10 pages)
Specifications of STPS1H100U
Voltage - Forward (vf) (max) @ If
770mV @ 1A
Voltage - Dc Reverse (vr) (max)
100V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
4µA @ 100V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Surface Mount
Package / Case
DO-214AA, SMB
Product
Schottky Diodes
Peak Reverse Voltage
100 V
Forward Continuous Current
1 A
Max Surge Current
50 A
Configuration
Single
Forward Voltage Drop
0.86 V @ 2 A
Maximum Reverse Leakage Current
4 uA
Operating Temperature Range
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-3210-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STPS1H100U
Manufacturer:
ST
Quantity:
54 000
Part Number:
STPS1H100U
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
STPS1H100UY
Manufacturer:
ST
Quantity:
50 000
STPS1H100
Figure 1.
Figure 3.
Figure 5.
0.001
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.0
0.01
0.1
0.1
1
0.01
10
0.0
1.E-03
9
8
7
6
5
4
3
2
1
0
P
P
F(AV)
P
I (A)
ARM
M
ARM p
0.1
SMB
I
M
(W)
(1µs)
(t )
0.2
Average forward power dissipation
versus average forward current
Normalized avalanche power
derating versus pulse duration
Non repetitive surge peak forward
current versus overload duration
(maximum values) (SMB)
0.1
δ
=0.5
t
0.3
δ = 0.05
1.E-02
0.4
1
0.5
δ = 0.1
I
F(AV)
t (µs)
p
t(s)
0.6
(A)
δ = 0.2
0.7
10
1.E-01
0.8
δ = 0.5
0.9
100
δ
=tp/T
1.0
T
T
T
a
a
=110 °C
=25 °C
a
=75 °C
δ = 1
T
1.E+00
1.1
tp
1000
1.2
Figure 2.
Figure 4.
Figure 6.
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.2
0.8
0.6
0.4
0.2
1
0
1.E-03
8
7
6
5
4
3
2
1
0
I
0
25
F(AV)
P
I (A)
M
P
ARM
ARM
δ
SMA
(A)
=tp/T
I
M
(25°C)
25
(T )
T
j
Average forward current versus
ambient temperature (δ = 0.5)
Normalized avalanche power
derating versus junction
temperature
Non repetitive surge peak forward
current versus overload duration
(maximum values) (SMA)
50
δ
=0.5
t
tp
R
th(j-a)
50
1.E-02
=200°C/W
R
th(j-a)
75
=120°C/W
75
R
T
th(j-a)
amb
t(s)
T (°C)
=100°C/W
j
(°C)
100
100
1.E-01
125
SMB / SMAflat
Characteristics
R
th(j-a)
125
=R
SMA
th(j-l)
T
T
150
T
a
a
=110 °C
=25 °C
a
=75 °C
1.E+00
150
175
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