STTH2R06U STMicroelectronics, STTH2R06U Datasheet

DIODE FAST 600V 2A HE SMB

STTH2R06U

Manufacturer Part Number
STTH2R06U
Description
DIODE FAST 600V 2A HE SMB
Manufacturer
STMicroelectronics
Datasheet

Specifications of STTH2R06U

Voltage - Forward (vf) (max) @ If
1.7V @ 2A
Voltage - Dc Reverse (vr) (max)
600V
Current - Average Rectified (io)
2A
Current - Reverse Leakage @ Vr
2µA @ 600V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
50ns
Mounting Type
Surface Mount
Package / Case
DO-214AA, SMB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Other names
497-3776-2

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Features
Description
The STTH2R06 is using ST Turbo 2 600 V planar
Pt doping technology. It is specially suited for
switching mode base drive & transistor circuits.
Packaged in axial, SMA, SMB and SMC, this
device is intended for use in high frequency
inverters, free wheeling and polarity protection.
October 2009
Very low conduction losses
Negligible switching losses
Low forward and reverse recovery times
High junction temperature
Doc ID 10757 Rev 3
Table 1.
High efficiency ultrafast diode
STTH2R06U
STTH2R06
DO-41
SMB
Symbol
V
t
rr
V
I
F(AV)
F
RRM
(typ)
T
(typ)
Device summary
j
A
STTH2R06
K
STTH2R06A
STTH2R06S
175 °C
600
SMA
Value
35 ns
1.0 V
SMC
2
A
V
www.st.com
1/10
10

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STTH2R06U Summary of contents

Page 1

... Packaged in axial, SMA, SMB and SMC, this device is intended for use in high frequency inverters, free wheeling and polarity protection. October 2009 High efficiency ultrafast diode A DO-41 STTH2R06 SMB STTH2R06U Table 1. Device summary Symbol I F(AV) V RRM T j ...

Page 2

Characteristics 1 Characteristics Table 2. Absolute ratings (limiting values) Symbol V Repetitive peak reverse voltage RRM I Forward rms current F(RMS) Average forward current δ = 0.5 I F(AV) I Surge non repetitive forward current FSM T Storage temperature range ...

Page 3

STTH2R06 Table 5. Dynamic electrical characteristics Symbol Parameter t Reverse recovery time rr t Forward recovery time fr V Forward recovery voltage FP Figure 1. Conduction losses versus average forward current P(W) 3.0 δ = 0.1 δ = 0.2 δ ...

Page 4

Characteristics Figure 5. Reverse recovery time versus dI (typical values) t (ns) rr 300 250 200 F(AV) 150 F(AV F(AV) 100 50 dI /dt(A/µ ...

Page 5

STTH2R06 Figure 11. Thermal resistance junction to ambient versus copper surface under each lead R (°C/W) th(j-a) 120 100 SMA SMB 80 60 SMB (cm² 0.0 0.5 1.0 1.5 2.0 2.5 Figure 12. Thermal resistance ...

Page 6

Package information 2 Package information ● Epoxy meets UL 94, V0 ● Band indicates cathode ● Bending method (DO-41): see Application note AN1471 In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, ...

Page 7

STTH2R06 Figure 13. Footprint (dimensions in mm) Table 8. SMB dimensions Figure 14. Footprint (dimensions in mm) 2.63 1.4 5.43 Ref 1.62 2.60 1.62 ...

Page 8

Package information Table 9. SMC dimensions Figure 15. Footprint (dimensions in mm) 8/10 Ref 1.54 5.11 8.19 Doc ID 10757 Rev 3 ...

Page 9

... STTH2R06 3 Ordering information Table 10. Ordering information Order code STTH2R06 STTH2R06RL STTH2R06A STTH2R06U STTH2R06S 4 Revision history Table 11. Document revision history Date 07-Sep-2004 1-Jun-2005 30-Sep-2009 Marking Package STTH2R06 DO-41 STTH2R06 DO-41 R6A SMA R6U SMB R62 SMC Revision 1 First issue 2 SMC package addition. ...

Page 10

... Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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