STTH506DTI STMicroelectronics, STTH506DTI Datasheet
STTH506DTI
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... The TURBOSWITCH “H” ultra high /dt OPERATION. F performance diode composed of two 300V dice in CURRENT TO series. TURBOSWITCH “H” family drastically cuts losses in the associated MOSFET when run at high dI ) ALLOWS HEATSINK AS ON Parameter sinusoidal = 0. 140°C STTH506DTI Insulated TO-220AC /dt. F Value 600 -65 +150 + 150 Unit V ...
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... STTH506DTI THERMAL AND POWER DATA Symbol Parameter R Junction to case thermal resistance th (j-c) STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter I * Reverse leakage current Forward voltage drop F Pulse test : * tp = 100 ms, < 380 µs, < evaluate the maximum conduction losses use the following equation : 1 0.14 I F(AV) F (RMS) ...
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... Fig. 6: Reverse recovery charges versus dI F (typical values). Q (nC) rr 100 V =400V V =400V =125° =125° =0 F(AV 350 400 450 500 0 STTH506DTI T =125°C j (maximum values) T =125°C j (typical values Peak reverse recovery current versus F(AV F(AV) I =0. F(AV) dI /dt(A/µ 100 150 ...
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STTH506TDI Fig. 7: Reverse recovery softness factor versus dI /dt (typical values 0. F(AV =400V R T =125°C j 0.50 0.40 0.30 dI /dt(A/µ 100 150 200 250 300 Fig. ...
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... Package Weight TO-220AC 2.3 g. © 2003 STMicroelectronics - All rights reserved. STMicroelectronics GROUP OF COMPANIES www.st.com STTH506DTI DIMENSIONS Millimeters Inches Min. Typ. Max. Min. Typ. Max. 15.20 15.90 0.598 3.75 0.147 13.00 14.00 0.511 10.00 10.40 0.393 0.61 0.88 0.024 1.23 1.32 0.048 4 ...