STTH506DTI STMicroelectronics, STTH506DTI Datasheet - Page 4

• Manufacturer Part Number: STTH506DTI
• Description: DIODE BOOST 600V 5A TO-220AC
• Manufacturer: STMicroelectronics

Specifications of STTH506DTI

• Voltage - Forward (vf) (max) @ If: 3.6V @ 5A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 5A
• Current - Reverse Leakage @ Vr: 6µA @ 600V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25ns
• Mounting Type: Through Hole
• Package / Case: TO-220-2 Insulated, TO-220AC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Other names: 497-3247-5

STTH506TDI
Fig. 11: Junction capacitance versus reverse
voltage applied (typical values).
100
4/5
Fig. 7: Reverse recovery softness factor versus
dI
0.60
0.50
0.40
0.30
0.20
Fig. 9: Transient peak forward voltage versus
dI
16
15
14
13
12
11
10
10
9
8
7
6
5
4
3
2
1
0
1
F
F
0
V
1
/dt (typical values).
/dt (typical values).
C(pF)
0
FP
S
I =I
T =125°C
F
j
I =I
V =400V
T =125°C
(V)
F
F(AV)
j
R
50
F(AV)
50
100
100
150
150
10
200
200
dI /dt(A/µs)
dI /dt(A/µs)
F
F
V (V)
250
250
R
300
300
100
350
350
400
400
V
OSC
F=1MHz
T =25°C
=30mV
j
450
450
RMS
1000
500
500
Fig. 8: Relative variation of dynamic parameters
versus junction temperature (reference: Tj = 125°C).
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
Fig. 10:
(typical values).
200
180
160
140
120
100
80
60
40
20
0
25
0
t (ns)
fr
Forward recovery time versus dI
100
50
200
dI /dt(A/µs)
S
I
RM
F
T (°C)
j
75
300
100
Reference: T =125°C
V =1.1 x V max.
400
V =400V
FR
I =I
F
R
T =125°C
I =I
F(AV)
F
j
j
F(AV)
F
F
/dt
125
500