STTH1R02A STMicroelectronics, STTH1R02A Datasheet - Page 4

• Manufacturer Part Number: STTH1R02A
• Description: DIODE ULTRA FAST 200V 1.5A SMA
• Manufacturer: STMicroelectronics

Specifications of STTH1R02A

• Voltage - Forward (vf) (max) @ If: 1V @ 1.5A
• Voltage - Dc Reverse (vr) (max): 200V
• Current - Average Rectified (io): 1.5A
• Current - Reverse Leakage @ Vr: 3µA @ 200V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 30ns
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Other names: 497-5254-1

Characteristics
4/10
Figure 5.
Figure 7.
Figure 9.
80
70
60
50
40
30
20
10
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
1.E-02
1.E-03
10
Single pulse
Leads =10mm
Single pulse
S
cu
V
SMB
DO-15
I
=1cm²
F
R
=1.5A
=160V
1.E-02
Relative variation of thermal
impedance junction to case versus
pulse duration (SMB)
1.E-01
Relative variation of thermal
impedance junction to case versus
pulse duration (DO-15)
Reverse recovery charges
versus dI
1.E-01
1.E+00
F
/dt (typical values)
1.E+00
T
100
j
=125°C
T
1.E+01
j
=25°C
t
1.E+01
P
(s)
t
P
(s)
1.E+02
1.E+02
dI
F
/dt(A/µs)
1.E+03
1.E+03
1000
Figure 6.
Figure 8.
Figure 10. Reverse recovery time versus dI
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
100
80
70
60
50
40
30
20
10
1.E-03
10
0
1
10
1
Single pulse
Lleads=10mm
DO-41
1.E-02
Relative variation of thermal
impedance junction to case versus
pulse duration (DO-41)
Junction capacitance versus
reverse applied voltage (typical
values)
(typical values)
1.E-01
10
1.E+00
100
T
T
j
j
=25°C
=125°C
1.E+01
100
1.E+02
V
dI
osc
F=1MHz
T
F
=30mV
/dt(A/µs)
j
V
=25°C
t
V
STTH1R02
R
I
P
F
R
(V)
(s)
=1.5A
=160V
RMS
1.E+03
1000
1000
F
/dt