STTH102 STMicroelectronics, STTH102 Datasheet - Page 4

• Manufacturer Part Number: STTH102
• Description: IC DIODE ULTRAFAST 220V 1A DO-41
• Manufacturer: STMicroelectronics

Specifications of STTH102

• Voltage - Forward (vf) (max) @ If: 970mV @ 1A
• Voltage - Dc Reverse (vr) (max): 220V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 1µA @ 220V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 20ns
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 200 V
• Forward Voltage Drop: 0.97 V
• Recovery Time: 20 ns
• Forward Continuous Current: 1 A
• Max Surge Current: 50 A
• Reverse Current Ir: 1 uA
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-3666-2; 497-3666-2; 497-3666-3

Characteristics
4/7
Figure 9.
Figure 11. Reverse recovery charges versus
Figure 13. Thermal resistance junction to
70
60
50
40
30
20
10
35.0
32.5
30.0
27.5
25.0
22.5
20.0
17.5
15.0
12.5
10.0
120
110
100
0
7.5
5.0
2.5
0.0
90
80
70
60
50
40
30
20
10
0
1
0.0
t (ns)
rr
R
1
Q (nC)
th(j-a)
rr
I =1A
V =100V
F
R
0.5
(°C/W)
Reverse recovery time versus dI
(90% confidence)
dI
ambient versus copper surface
under each lead (Epoxy printed
circuit board FR4, copper
thickness: 35 µm) (SMA)
1.0
F
/dt (90% confidence)
1.5
10
10
2.0
dI /dt(A/µs)
dI /dt(A/µs)
F
F
S(cm²)
T =25°C
j
T =125°C
2.5
j
T =125°C
j
3.0
100
100
3.5
T =25°C
j
4.0
I =1A
V =100V
T =125°C
F
4.5
R
j
1000
1000
F
5.0
/dt
Figure 10. Peak recovery current versus dI
Figure 12. Relative variations of dynamic
Figure 14. Thermal resistance versus
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
3.5
3.0
2.5
2.0
1.5
1.0
120
110
100
90
80
70
60
50
40
30
20
10
0
25
1
I
I
5
RM
RM
R (°C/W)
th
(A)
I =1A
V =100V
T =125°C
; t ; Q [T ] /
F
dI /dt=200A/µs
j
R
F
V =100V
rr
I =I
F
R
F(AV)
50
rr
(90% confidence)
parameters versus junction
temperature
lead length (DO-41)
j
10
I
RM
10
75
; t ; Q [T =25°C]
rr
dI /dt(A/µs)
L
F
leads
rr
100
R
T (°C)
R
th(j-a)
15
th(j-I)
j
(mm)
j
T =125°C
j
100
125
T =25°C
j
20
Q
I
RR
RM
150
t
STTH102
rr
F
1000
175
/dt
25