PMBD914,235 NXP Semiconductors, PMBD914,235 Datasheet - Page 5

DIODE HIGH SPEED SWITCHING SOT23

PMBD914,235

Manufacturer Part Number
PMBD914,235
Description
DIODE HIGH SPEED SWITCHING SOT23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PMBD914,235

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Voltage - Forward (vf) (max) @ If
1.25V @ 150mA
Voltage - Dc Reverse (vr) (max)
100V
Current - Average Rectified (io)
215mA (DC)
Current - Reverse Leakage @ Vr
1µA @ 75V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
4ns
Capacitance @ Vr, F
1.5pF @ 0V, 1MHz
Mounting Type
Surface Mount
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
100 V
Forward Voltage Drop
1.25 V at 0.15 A
Recovery Time
4 ns
Forward Continuous Current
0.215 A
Max Surge Current
4 A
Reverse Current Ir
0.025 uA
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
933856870235
PMBD914 /T3
PMBD914 /T3
NXP Semiconductors
8. Test information
PMBD914_6
Product data sheet
Fig 6.
Fig 7.
(1) I
R
V = V
S
R
S
= 50
Reverse recovery time test circuit and waveforms
Forward recovery voltage test circuit and waveforms
R
R
= 50
I
= 1 mA
I
F
R
S
1 k
D.U.T.
Fig 5.
450
I
F
D.U.T.
OSCILLOSCOPE
FR4 PCB, standard footprint
Forward current as a function of ambient temperature; derating curve
R
i
= 50
OSCILLOSCOPE
mga881
SAMPLING
R
i
= 50
(mA)
Rev. 06 — 11 February 2009
I
F
250
200
150
100
50
0
0
I
V
R
10 %
t
r
50
t
10 %
r
90 %
input signal
90 %
input signal
t
p
100
t
p
Single high-speed switching diode
150
T
amb
t
msa562
t
( C)
200
V
I
F
V FR
PMBD914
output signal
output signal
© NXP B.V. 2009. All rights reserved.
t rr
mga882
(1)
t
t
5 of 10

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