BAV20,143 NXP Semiconductors, BAV20,143 Datasheet

DIODE GP 150V 250MA DO-35

BAV20,143

Manufacturer Part Number
BAV20,143
Description
DIODE GP 150V 250MA DO-35
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BAV20,143

Voltage - Forward (vf) (max) @ If
1.25V @ 200mA
Voltage - Dc Reverse (vr) (max)
150V
Current - Average Rectified (io)
250mA (DC)
Current - Reverse Leakage @ Vr
100nA @ 150V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
50ns
Capacitance @ Vr, F
5pF @ 0V, 1MHz
Mounting Type
Through Hole
Package / Case
DO-204AH, DO-35, Axial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
933189200143
Product data sheet
Supersedes data of 1996 Sep 17
DATA SHEET
BAV20; BAV21
General purpose diodes
M3D176
DISCRETE SEMICONDUCTORS
1999 May 25

Related parts for BAV20,143

BAV20,143 Summary of contents

Page 1

DATA SHEET BAV20; BAV21 General purpose diodes Product data sheet Supersedes data of 1996 Sep 17 DISCRETE SEMICONDUCTORS M3D176 1999 May 25 ...

Page 2

... NXP Semiconductors General purpose diodes FEATURES • Hermetically sealed leaded glass SOD27 (DO-35) package • Switching speed: max • General application • Continuous reverse voltage: max. 150 V, 200 V • Repetitive peak reverse voltage: max. 200 V, 250 V • Repetitive peak forward current: max ...

Page 3

... NXP Semiconductors General purpose diodes LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER V repetitive peak reverse voltage RRM BAV20 BAV21 V continuous peak reverse voltage R BAV20 BAV21 I continuous forward current F I repetitive peak forward current FRM I non-repetitive peak forward current ...

Page 4

... NXP Semiconductors General purpose diodes ELECTRICAL CHARACTERISTICS = 25 °C unless otherwise specified SYMBOL PARAMETER V forward voltage F I reverse current R C diode capacitance d t reverse recovery time rr THERMAL CHARACTERISTICS SYMBOL PARAMETER R thermal resistance from junction to tie-point th j-tp R thermal resistance from junction to ambient th j-a Note 1 ...

Page 5

... NXP Semiconductors General purpose diodes GRAPHICAL DATA 300 handbook, halfpage I F (mA) 200 100 0 0 100 Device mounted on an FR4 printed-circuit board; lead length 10 mm. Fig.2 Maximum permissible continuous forward current as a function of ambient temperature handbook, full pagewidth I FSM ( − Based on square wave currents. ...

Page 6

... NXP Semiconductors General purpose diodes 3 10 handbook, halfpage I R (μ −1 10 − 100 Rmax Solid line; maximum values. Dotted line; typical values. Fig.5 Reverse current as a function of junction temperature. 300 handbook, halfpage V R (V) (1) 200 (2) 100 0 0 100 (1) BAV21. (2) BAV20. Fig.7 ...

Page 7

... NXP Semiconductors General purpose diodes handbook, full pagewidth D.U. Ω ( mA. R Fig.8 Reverse recovery voltage test circuit and waveforms. 1999 May 10% SAMPLING OSCILLOSCOPE Ω 90 MGA881 input signal 7 Product data sheet BAV20; BAV21 (1) output signal ...

Page 8

... NXP Semiconductors General purpose diodes PACKAGE OUTLINE Hermetically sealed glass package; axial leaded; 2 leads D DIMENSIONS (mm are the original dimensions UNIT max. max. max. mm 0.56 1.85 4.25 Note 1. The marking band indicates the cathode. OUTLINE VERSION IEC SOD27 A24 1999 May 25 (1) ...

Page 9

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 10

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © ...

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