BAV21,143 NXP Semiconductors, BAV21,143 Datasheet - Page 4
![DIODE GP 200V 250MA DO-35](/photos/5/24/52491/do-35_axial_sml.jpg)
BAV21,143
Manufacturer Part Number
BAV21,143
Description
DIODE GP 200V 250MA DO-35
Manufacturer
NXP Semiconductors
Datasheet
1.BAV20133.pdf
(10 pages)
Specifications of BAV21,143
Voltage - Forward (vf) (max) @ If
1.25V @ 200mA
Voltage - Dc Reverse (vr) (max)
200V
Current - Average Rectified (io)
250mA (DC)
Current - Reverse Leakage @ Vr
100nA @ 200V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
50ns
Capacitance @ Vr, F
5pF @ 0V, 1MHz
Mounting Type
Through Hole
Package / Case
DO-204AH, DO-35, Axial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
933189210143
NXP Semiconductors
ELECTRICAL CHARACTERISTICS
T
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed circuit-board without metallization pad.
1999 May 25
V
I
C
t
R
R
SYMBOL
SYMBOL
j
R
rr
= 25 °C unless otherwise specified.
F
General purpose diodes
d
th j-tp
th j-a
forward voltage
reverse current
diode capacitance
reverse recovery time
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
PARAMETER
PARAMETER
see Fig.3
see Fig.5
f = 1 MHz; V
when switched from I
I
at I
R
I
I
V
V
= 30 mA; R
F
F
R
R
R
= 100 mA
= 200 mA
= 3 mA; see Fig.8
= V
= V
lead length 10 mm
lead length 10 mm; note 1
4
Rmax
Rmax
CONDITIONS
R
; T
L
= 0; see Fig.6
= 100 Ω; measured
j
= 150 °C
CONDITIONS
F
= 30 mA to
−
−
−
−
−
−
MIN.
BAV20; BAV21
1.0
1.25
100
100
5
50
VALUE
Product data sheet
MAX.
240
375
V
V
nA
μA
pF
ns
UNIT
UNIT
K/W
K/W