BAW62,113 NXP Semiconductors, BAW62,113 Datasheet - Page 5

• Manufacturer Part Number: BAW62,113
• Description: DIODE SW 75V 250MA H-S DO-35
• Manufacturer: NXP Semiconductors

Specifications of BAW62,113

• Package / Case: DO-204AH, DO-35, Axial
• Voltage - Forward (vf) (max) @ If: 1V @ 100mA
• Voltage - Dc Reverse (vr) (max): 75V
• Current - Average Rectified (io): 250mA (DC)
• Current - Reverse Leakage @ Vr: 5µA @ 75V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 4ns
• Capacitance @ Vr, F: 2pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Product: Switching Diodes
• Peak Reverse Voltage: 75 V
• Forward Continuous Current: 0.25 A
• Max Surge Current: 4 A
• Configuration: Single
• Recovery Time: 4 ns
• Forward Voltage Drop: 1 V
• Maximum Reverse Leakage Current: 5 uA
• Operating Temperature Range: + 200 C
• Maximum Operating Temperature: + 200 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 933101220113; BAW62 T/R; BAW62 T/R

NXP Semiconductors
1996 Sep 17
handbook, halfpage
High-speed diode
(1) V
(2) V
(3) V
Fig.5
(μA)
I R
10
10
R
R
R
10
10
10
−1
−2
= 75 V; maximum values.
= 75 V; typical values.
= 20 V; typical values.
1
3
2
Reverse current as a function of junction
temperature.
0
(1)
100
(2)
T j (
o
C)
(3)
MGD006
200
5
handbook, halfpage
f = 1 MHz; T
Fig.6
(pF)
C d
1.2
1.0
0.8
0.6
0.4
0
Diode capacitance as a function of reverse
voltage; typical values.
j
= 25 °C.
10
V R (V)
Product data sheet
BAW62
MGD004
20