BAT754,215 NXP Semiconductors, BAT754,215 Datasheet - Page 4
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BAT754,215
Manufacturer Part Number
BAT754,215
Description
DIODE SCHTK DUAL 30V 200MA SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.BAT754A215.pdf
(7 pages)
Specifications of BAT754,215
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Mounting Type
Surface Mount
Speed
Small Signal =< 200mA (Io), Any Speed
Current - Reverse Leakage @ Vr
2µA @ 25V
Voltage - Forward (vf) (max) @ If
600mV @ 100mA
Voltage - Dc Reverse (vr) (max)
30V
Capacitance @ Vr, F
10pF @ 1V, 1MHz
Current - Average Rectified (io)
200mA (DC)
Product
Schottky Diodes
Peak Reverse Voltage
30 V
Forward Continuous Current
0.2 A
Max Surge Current
0.6 A
Configuration
Single
Forward Voltage Drop
0.42 V @ 0.03 A
Maximum Reverse Leakage Current
2 uA @ 25 V
Operating Temperature Range
+ 125 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934055714215::BAT754 T/R::BAT754 T/R
NXP Semiconductors
GRAPHICAL DATA
2003 Mar 25
handbook, halfpage
handbook, halfpage
Schottky barrier (double) diodes
(1) T
(2) T
(3) T
Fig.6
f = 1 MHz; T
Fig.8
(mA)
I F
10
(pF)
C d
10
10
10
15
10
1
amb
amb
amb
5
0
3
2
1
0
0
(1)
= 125 °C.
= 85 °C.
= 25 °C.
Forward current as a function of forward
voltage; typical values.
Diode capacitance as a function of reverse
voltage; typical values.
amb
(2)
= 25 °C.
(3)
10
0.4
(1)
(2)
0.8
20
(3)
V F (V)
V R (V)
MSA891
MSA892
1.2
30
4
(1) T
(2) T
(3) T
Fig.7
(μA)
I
R
10
10
10
10
amb
amb
amb
3
2
1
1
0
= 125 °C.
= 85 °C.
= 25 °C.
Reverse current as a function of reverse
voltage; typical values.
10
BAT754 series
20
Product data sheet
V
R
(1)
(2)
(3)
(V)
MSA893
30