1N5821 STMicroelectronics, 1N5821 Datasheet - Page 3

DIODE SCHOTTKY 30V 3A DO201AD

1N5821

Manufacturer Part Number
1N5821
Description
DIODE SCHOTTKY 30V 3A DO201AD
Manufacturer
STMicroelectronics
Datasheet

Specifications of 1N5821

Voltage - Forward (vf) (max) @ If
500mV @ 3A
Voltage - Dc Reverse (vr) (max)
30V
Current - Average Rectified (io)
3A
Current - Reverse Leakage @ Vr
2mA @ 30V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Through Hole
Package / Case
DO-201AD, Axial
Product
Schottky Diodes
Peak Reverse Voltage
30 V
Forward Continuous Current
3 A
Max Surge Current
80 A
Configuration
Single
Forward Voltage Drop
0.9 V @ 9.4 A
Maximum Reverse Leakage Current
2000 uA
Operating Temperature Range
+ 150 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

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Fig. 5-1: Average forward current versus ambient
temperature ( =0.5) (1N5820/1N5821).
Fig. 6-1:
current versus overload duration (maximum
values) (1N5820/1N5821).
Fig. 7: Relative variation of thermal impedance
junction to ambient versus pulse duration (epoxy
printed circuit board, e(Cu)=35mm, recommended
pad layout).
IF(av)(A)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
16
14
12
10
1.0
0.8
0.6
0.4
0.2
0.0
1E-3
8
6
4
2
0
1E-1
0
IM(A)
Zth(j-a)/Rth(j-a)
Single pulse
I
= 0.5
M
= 0.2
= 0.1
=tp/T
=0.5
t
25
T
1E+0
Non repetitive surge peak forward
tp
1E-2
Rth(j-a)=80°C/W
50
Rth(j-a)=Rth(j-l)=25°C/W
Tamb(°C)
1E+1
t(s)
75
tp(s)
1E-1
100
1E+2
=tp/T
125
Ta=25°C
Ta=100°C
T
Ta=75°C
tp
1E+0
1E+3
150
Fig. 5-2: Average forward current versus ambient
temperature ( =0.5) (1N5822).
Fig. 6-2:
current versus overload duration (maximum
values) (1N5822).
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values).
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
12
11
10
600
100
1E-3
9
8
7
6
5
4
3
2
1
0
10
0
IM(A)
IF(av)(A)
1
C(pF)
I
M
=tp/T
=0.5
t
25
T
2
Rth(j-a)=80°C/W
Non repetitive surge peak forward
tp
Rth(j-a)=Rth(j-l)=25°C/W
1E-2
50
Tamb(°C)
5
t(s)
1N5822
75
VR(V)
1N5820
1E-1
10
100
125
20
1N582x
Ta=100°C
1N5821
F=1MHz
Ta=25°C
Tj=25°C
Ta=75°C
1E+0
150
3/5
40

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