STTH1R06A STMicroelectronics, STTH1R06A Datasheet - Page 3

• Manufacturer Part Number: STTH1R06A
• Description: DIODE FAST 600V 1A SMA
• Manufacturer: STMicroelectronics

Specifications of STTH1R06A

• Voltage - Forward (vf) (max) @ If: 1.7V @ 1A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 1µA @ 600V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 45ns
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Rectifier Type: Switching Diode
• Configuration: Single
• Peak Rep Rev Volt: 600V
• Avg. Forward Curr (max): 1A
• Rev Curr: 1uA
• Peak Non-repetitive Surge Current (max): 20A
• Forward Voltage: 1.7V
• Operating Temp Range: -65C to 175C
• Package Type: SMA
• Rev Recov Time: 45ns
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2
• Product: Ultra Fast Recovery Rectifier
• Reverse Voltage: 600 V
• Forward Voltage Drop: 1.7 V
• Recovery Time: 45 ns
• Forward Continuous Current: 1 A
• Max Surge Current: 20 A
• Reverse Current Ir: 1 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 497-3765-2

STTH1R06
Table 5.
Figure 1.
Figure 3.
Symbol
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
V
1.E-01
t
t
FP
rr
fr
0.0
Z
P(W)
δ = 0.5
δ = 0.2
δ = 0.1
th(j-c)
Reverse recovery
time
Forward recovery
time
Forward recovery
voltage
/R
th(j-c)
0.2
Dynamic characteristics
Parameter
Conduction losses versus average
forward current
Relative variation of thermal
impedance junction to case vs
pulse duration (DO-41)
1.E+00
δ = 0.05
Single pulse
0.4
δ = 0.1
I
1.E+01
t (s)
F(AV)
p
0.6
T
T
T
(A)
δ = 0.2
j
j
j
= 25 °C
= 25 °C
= 25 °C
0.8
δ = 0.5
1.E+02
δ
=tp/T
I
I
I
V
I
V
δ
F
F
F
F
=tp/T
FR
FR
1.0
δ = 1
Test conditions
= 1A dI
= 0.5A I
= 1A
= 1A
T
= 1.1 x V
= 1.1 x V
Doc ID 10203 Rev 5
T
tp
1.E+03
tp
1.2
F
dI
dI
/dt = -50 A/µs V
rr
F
F
= 0.25A I
/dt = 100 A/µs
Fmax
Fmax
/dt = 100 A/µs
Figure 2.
Figure 4.
15
14
13
12
11
10
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
9
8
7
6
5
4
3
2
1
0
1.E-01
0
I
FM
Z
th(j-c)
R
S = 1cm
δ = 0.5
Single pulse
(A)
δ = 0.2
δ = 0.1
=1A
R
/R
2
=30V
th(j-c)
Forward voltage drop vs forward
current
Relative variation of thermal
impedance junction to case vs
pulse duration (SMA)
(typical values)
1
1.E+00
T =125°C
j
(maximum values)
Min.
T =125°C
j
2
V
1.E+01
t (s)
p
FM
(V)
Typ.
30
3
(maximum values)
1.E+02
Characteristics
T =25°C
Max.
j
100
δ
25
45
10
=tp/T
4
T
tp
Unit
1.E+03
ns
ns
V
5
3/9