STPS140U STMicroelectronics, STPS140U Datasheet - Page 3

• Manufacturer Part Number: STPS140U
• Description: DIODE SCHOTTKY 40V 1A SMB
• Manufacturer: STMicroelectronics

Specifications of STPS140U

• Voltage - Forward (vf) (max) @ If: 550mV @ 1A
• Voltage - Dc Reverse (vr) (max): 40V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 12µA @ 40V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Product: Schottky Rectifiers
• Peak Reverse Voltage: 40 V
• Forward Continuous Current: 1 A
• Max Surge Current: 60 A
• Configuration: Single
• Forward Voltage Drop: 0.65 V at 2 A
• Maximum Reverse Leakage Current: 12 uA
• Operating Temperature Range: + 150 C
• Mounting Style: SMD/SMT
• Rectifier Type: Schottky Diode
• Peak Rep Rev Volt: 40V
• Avg. Forward Curr (max): 1A
• Rev Curr: 12uA
• Peak Non-repetitive Surge Current (max): 60A
• Forward Voltage: 0.65V
• Operating Temp Range: -65C to 150C
• Package Type: SMB
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-2490-2

Figure 5: Non repetitive surge peak forward
current versus overload duration (maximum
values) (SMA)
Figure
impedance junction to ambient versus pulse
duration
e(Cu)=35µm, recommended pad layout) (SMA)
Figure 9: Reverse leakage current versus
reverse voltage applied (typical values)
8
7
6
5
4
3
0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.0
1E+3
1E+2
1E+0
2
0.2
1
0.1
1E+1
1E-2
1E-1
1E-3
1E-2
I (A)
M
Z
I
I (µA)
0
M
th(j-c)
δ = 0.5
Single pulse
δ = 0.2
δ = 0.1
R
δ
/R
7:
=0.5
t
5
th(j-c)
(epoxy
1E-1
Relative
10
1E-2
15
printed
t(s)
t (s)
1E+0
p
V (V)
T =125°C
T =25°C
variation
T =75°C
j
j
j
R
20
1E-1
25
circuit
1E+1
of
δ
30
=tp/T
T
thermal
T =100°C
35
T =25°C
T =50°C
a
board,
a
a
tp
1E+0
1E+2
40
Figure 6: Non repetitive surge peak forward
current versus overload duration (maximum
values) (SMB)
Figure
impedance junction to ambient versus pulse
duration
e(Cu)=35µm, recommended pad layout) (SMB)
Figure
reverse voltage applied (typical values)
8
7
6
5
4
3
2
0
200
100
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1
50
20
10
1E-3
1E-2
I (A)
M
1
C(pF)
Z
I
th(j-c)
δ = 0.5
Single pulse
M
δ = 0.2
δ = 0.1
/R
δ
8:
10:
=0.5
t
th(j-c)
1E-1
2
(epoxy
Relative
Junction
1E-2
1E+0
5
printed
t(s)
t (s)
V (V)
p
variation
R
capacitance
1E+1
10
1E-1
circuit
of
δ
20
=tp/T
1E+2
STPS140
T
thermal
F=1MHz
T =25°C
T =100°C
versus
T =25°C
board,
j
T =50°C
a
a
a
tp
1E+3
1E+0
3/7
50