STTH1R06U STMicroelectronics, STTH1R06U Datasheet - Page 5

• Manufacturer Part Number: STTH1R06U
• Description: DIODE TURBO2 600V 1A SMB
• Manufacturer: STMicroelectronics

Specifications of STTH1R06U

• Voltage - Forward (vf) (max) @ If: 1.7V @ 1A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 1µA @ 600V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 45ns
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 600 V
• Forward Voltage Drop: 1.7 V
• Recovery Time: 45 ns
• Forward Continuous Current: 1 A
• Max Surge Current: 20 A
• Reverse Current Ir: 1 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-4406-2

STTH1R06
Figure 11. Transient peak forward voltage vs
Figure 13. Junction capacitance versus
Figure 15. Thermal resistance junction to ambient versus copper surface under each lead
100
10
25
20
15
10
1
5
0
1
0
V
C(pF)
FP
I =I
T =125°C
F
j
(V)
F(AV)
20
40
dI
reverse voltage applied
(typical values)
(epoxy FR4, Cu = 35 µm) (SMA)
F
/dt (typical values)
60
10
80
dI /dt(A/µs)
F
V (V)
100
R
140
130
120
110
100
90
80
70
60
50
40
30
20
10
120
0
0.0
R
th(j-a)
100
140
0.5
(°C/W)
160
1.0
V
OSC
F=1MHz
T =25°C
j
180
Doc ID 10203 Rev 5
=30mV
1.5
SMA
200
1000
2.0
S(cm²)
2.5
Figure 12. Forward recovery time vs dI
Figure 14. Thermal resistance junction to
200
180
160
140
120
100
110
100
80
60
40
20
90
80
70
60
50
40
30
20
10
3.0
0
0
0
0
R
t (ns)
fr
th(j-a)
3.5
20
1
(°C/W)
4.0
(typical values)
ambient versus copper surface
under each lead
40
2
4.5
60
(epoxy FR4, Cu = 35 µm) (DO-41, SMB)
3
SMB
5.0
80
Lleads = 10mm
4
dI /dt(A/µs)
DO-41
F
S(cm²)
100
5
120
6
140
Characteristics
7
160
V =1.1 x V max.
FR
8
T =125°C
I =I
F
j
F(AV)
F
180
F
/dt
9
200
10
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