STTH1L06U STMicroelectronics, STTH1L06U Datasheet - Page 4

• Manufacturer Part Number: STTH1L06U
• Description: DIODE FAST 600V 1A SMB
• Manufacturer: STMicroelectronics

Specifications of STTH1L06U

• Voltage - Forward (vf) (max) @ If: 1.3V @ 1A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 1µA @ 600V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 80ns
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 600 V
• Forward Voltage Drop: 1.3 V
• Recovery Time: 80 ns
• Forward Continuous Current: 1 A
• Max Surge Current: 20 A
• Reverse Current Ir: 1 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-3766-2

Characteristics
4/9
Figure 5.
Figure 7.
Figure 9.
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
800
700
600
500
400
300
200
100
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.E-01
0
0
Zth(j-a)/Rth(j-a)
0
S factor
trr(ns)
δ = 0.5
δ = 0.2
δ = 0.1
Single pulse
SMA
5
5
10
Relative variation of thermal
impedance junction ambient versus
pulse duration (epoxy FR4)
Reverse recovery time versus dI
(90% confidence)
IF=2 x IF(av)
IF=2 x IF(av)
10
Softness factor versus dI
(typical values)
1.E+00
15
15
20
20
dIF/dt(A/µs)
IF=IF(av)
IF=IF(av)
dIF/dt(A/µs)
1.E+01
tp(s)
25
25
30
30
1.E+02
35
35
IF=0.5 x IF(av)
IF=0.5 x IF(av)
δ
=tp/T
40
40
F
VR=400V
Tj=125°C
IF=IF(av)
/dt
T
VR=400V
Tj=125°C
Doc ID 8321 Rev 4
45
45
tp
1.E+03
F
/dt
50
50
Figure 6.
Figure 8.
Figure 10. Relative variations of dynamic
1.25
1.00
0.75
0.50
0.25
0.00
220
200
180
160
140
120
100
2.5
2.3
2.0
1.8
1.5
1.3
1.0
0.8
0.5
0.3
0.0
80
60
40
20
0
25
0
IRM(A)
0
Qrr(nC)
VR=400V
Tj=125°C
VR=400V
Tj=125°C
IF=0.25 x IF(av)
IF=0.25 x IF(av)
5
5
10
10
Peak reverse recovery current
versus dI
Reverse recovery charges versus
dI
parameters versus junction
temperature
IF=0.5 x IF(av)
IF=0.5 x IF(av)
50
F
/dt (90% confidence)
15
15
20
20
S factor
dIF/dt(A/µs)
F
QRR
dIF/dt(A/µs)
IRM
/dt (90% confidence)
IF=IF(av)
IF=IF(av)
Tj(°C)
25
25
75
IF=0.5 x IF(av)
IF=2 x IF(av)
30
IF=IF(av)
30
IF=2 x IF(av)
IF=2 x IF(av)
35
35
100
Reference: Tj=125°C
40
40
STTH1L06
VR=400V
IF=IF(av)
45
45
50
50
125