STPS2H100 STMicroelectronics, STPS2H100 Datasheet - Page 3

• Manufacturer Part Number: STPS2H100
• Description: DIODE SCHOTTKY 2A 100V DO-41
• Manufacturer: STMicroelectronics

Specifications of STPS2H100

• Voltage - Forward (vf) (max) @ If: 860mV @ 2A
• Voltage - Dc Reverse (vr) (max): 100V
• Current - Average Rectified (io): 2A
• Current - Reverse Leakage @ Vr: 1µA @ 100V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -

STPS2H100RL
Figure 1.
Figure 3.
Figure 5.
0.001
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.01
10
1.E-03
0.1
9
8
7
6
5
4
3
2
1
0
0.0
1
0.01
I (A)
P
M
P
F(AV)
P
ARM
I
M
ARM
0.2
(W)
(1 µs)
(t p )
δ
=0.5
t
0.4
Average forward current versus
ambient temperature (δ = 0.5)
Normalized avalanche power
derating versus pulse duration
Non repetitive surge peak forward
current versus overload duration
(maximum values)
0.1
0.6
1.E-02
δ = 0.05
0.8
1
1.0
I
t (µs)
F(AV)
p
t(s)
δ = 0.1
1.2
(A)
10
1.E-01
1.4
δ = 0.2
1.6
δ = 0.5
100
δ
=tp/T
1.8
δ = 1
T =125°C
T
T =25°C
T =75°C
a
Doc ID 9217 Rev 4
2.0
a
a
1.E+00
tp
1000
2.2
Figure 2.
Figure 4.
Figure 6.
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.2
0.8
0.6
0.4
0.2
1.E-02
1
0
0
I
25
Z
F(AV)
P
th(j-a)
δ = 0.5
δ = 0.2
Single pulse
ARM
δ = 0.1
P
δ
ARM
=tp/T
(A)
(25 °C)
/R
25
(T j )
th(j-a)
1.E-01
T
Average forward current versus
ambient temperature
Normalized avalanche power
derating versus junction
temperature
Relative variation of thermal
impedance junction to ambient
versus pulse duration
50
tp
50
R
th(j-a)
R
th(j-a)
=100°C/W
1.E+00
=R
75
th(j-I)
75
T
amb
t (s)
T (°C)
p
j
(°C)
1.E+01
100
100
125
Characteristics
1.E+02
δ
=tp/T
125
150
T
tp
1.E+03
150
175
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