STTH310S STMicroelectronics, STTH310S Datasheet - Page 3

• Manufacturer Part Number: STTH310S
• Description: DIODE ULT FAST 3A 1000V SMC
• Manufacturer: STMicroelectronics

Specifications of STTH310S

• Voltage - Forward (vf) (max) @ If: 1.7V @ 3A
• Voltage - Dc Reverse (vr) (max): 1000V (1kV)
• Current - Average Rectified (io): 3A
• Current - Reverse Leakage @ Vr: 10µA @ 1000V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 75ns
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 1000 V
• Forward Voltage Drop: 1.7 V
• Recovery Time: 75 ns
• Forward Continuous Current: 3 A
• Max Surge Current: 45 A
• Reverse Current Ir: 10 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 50 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-8053-2; STTH310S

STTH310
Figure 5.
Figure 1.
Figure 3.
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.E-01
0.0
P(W)
Z
th(j-c)
δ = 0.5
δ = 0.2
δ = 0.1
Epoxy printed circuit board, FR4,
L
leads
= 10 mm
/R
0.5
th(j-c)
Conduction losses versus
average current
Relative variation of thermal
impedance junction ambient
versus pulse duration (DO-201AD)
Thermal resistance junction to ambient versus copper surface under each lead
1.E+00
Single pulse
δ = 0.05
1.0
1.5
δ = 0.1
I
F(AV)
1.E+01
t (s)
p
(A)
110
100
2.0
δ = 0.2
90
80
70
60
50
40
30
20
10
0
0
R
th(j-a)
1.E+02
2.5
δ = 0.5
(°C/W)
δ
=tp/T
δ
=tp/T
1
3.0
T
T
δ = 1
Doc ID 9346 Rev 3
tp
1.E+03
tp
3.5
2
L
S(cm²)
DO-201AD
leads
Figure 2.
Figure 4.
=10mm
SMB
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
100.0
10.0
1.E-01
Epoxy printed circuit board, FR4,
copper thickness = 35 µm
1.0
0.1
3
Z
0.0
Epoxy printed circuit board, FR4,
S = 1cm
th(j-c)
δ = 0.5
Single pulse
δ = 0.2
δ = 0.1
I
FM
(A)
/R
2
th(j-c)
Forward voltage drop versus
forward current
Relative variation of thermal
impedance junction ambient
versus pulse duration (SMC)
0.5
4
1.E+00
(typical values)
T =150°C
j
1.0
5
(maximum values)
1.E+01
t (s)
p
T =150°C
j
1.5
V
FM
(V)
(maximum values)
2.0
1.E+02
Characteristics
T =25°C
j
δ
=tp/T
2.5
T
tp
1.E+03
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