DPG10IM300UC IXYS, DPG10IM300UC Datasheet
DPG10IM300UC
Manufacturer Part Number
DPG10IM300UC
Description
DIODE HFRED 300V 10A TO-252DPAK
Manufacturer
IXYS
Series
HiPerFRED™r
Datasheet
1.DPG10IM300UC.pdf
(4 pages)
Specifications of DPG10IM300UC
Voltage - Forward (vf) (max) @ If
1.27V @ 10A
Voltage - Dc Reverse (vr) (max)
300V
Current - Average Rectified (io)
10A
Current - Reverse Leakage @ Vr
1µA @ 300V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
35ns
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Product
Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
300 V
Forward Voltage Drop
1.45 V at 20 A
Recovery Time
35 ns
Forward Continuous Current
10 A
Max Surge Current
140 A
Reverse Current Ir
1 uA
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Vrrm, (v)
300
Ifavm, D = 0.5, Total, (a)
10
Ifavm, D = 0.5, Per Diode, (a)
10
@ Tc, (°c)
150
Ifrms, (a)
20
Ifsm, 10 Ms, Tvj=45°c, (a)
140
Vf, Max, Tvj =150°c, (v)
0.98
@ If, (a)
10
Trr, Typ, Tvj =25°c, (ns)
35
Irm , Typ, Tvj =100°c, (a)
5.5
@ -di/dt, (a/µs)
200
Tvjm, (°c)
175
Rthjc, Max, (k/w)
2.30
Package Style
TO-252AA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Details
HiPerFRED²
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Single Diode
Part number
DPG 10 IM 300 UC
Marking on Product: PAOGUI
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
Symbol
V
I
V
I
V
r
R
T
P
I
I
t
C
IXYS reserves the right to change limits, conditions and dimensions.
©
Features / Advantages:
R
FAV
FSM
RM
F
rr
RRM
F0
VJ
tot
- Power dissipation within the diode
- Turn-on loss in the commutating switch
F
J
thJC
2009 IXYS all rights reserved
average forward current
thermal resistance junction to case
junction capacitance
Definition
max. repetitive reverse voltage
reverse current
forward voltage
threshold voltage
slope resistance
virtual junction temperature
total power dissipation
max. forward surge current
max. reverse recovery current
reverse recovery time
for power loss calculation only
Applications:
● Antiparallel diode for high frequency
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
● Uninterruptible power supplies (UPS)
Conditions
V
V
I
I
I
I
rectangular
t = 10 ms
I
-di
V =
F
F
F
F
F
R
R
R
switching devices
supplies (SMPS)
=
F
=
=
=
=
=
=
/dt
150
10
Data according to IEC 60747and per diode unless otherwise specified
300
300
=
10
20
10
20
A;
V;
1
3
V
V
A
A
A
A
200
V
(50 Hz), sine
R
f = 1 MHz
A/µs
=
d =
200
0.5
V
2
T
T
T
T
T
T
T
T
T
T
T
T = 125°C
T
T = 125°C
VJ
VJ
VJ
VJ
VJ
C
VJ
C
VJ
VJ
VJ
VJ
VJ
VJ
= 25
=
=
=
=
= 150°C
= 175°C
=
= 45°C
=
=
=
DPG 10 IM 300 UC
150
150
25
25
25
25
25
25
● Housing:
V
I
t
Package:
●rIndustry standard outline
●rEpoxy meets UL 94V-0
●rRoHS compliant
FAV
°C
°C
°C
°C
°C
°C
°C
°C
°C
rr
RRM
min.
=
=
=
-55
R a t i n g s
TO-252 (DPak)
typ.
300
5.5
15
35
45
Backside: cathode
10
35 ns
3
max.
0.06
1.27
1.45
0.98
1.17
0.74
2.30
V
A
300
175
140
10
18
65
1
20090323a
Unit
K/W
mΩ
mA
µA
pF
°C
ns
ns
W
V
V
V
V
V
A
V
A
A
A
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DPG10IM300UC Summary of contents
Page 1
... FSM I max. reverse recovery current RM t reverse recovery time rr C junction capacitance J IXYS reserves the right to change limits, conditions and dimensions. 2009 IXYS all rights reserved © Applications: ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● ...
Page 2
... In case common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting the backside. Product Marking IXYS Logo abcdefg Marking on product SYY Date Code Ordering DPG 10 IM 300 UC Standard IXYS reserves the right to change limits, conditions and dimensions. 2009 IXYS all rights reserved © Conditions 1) per pin Semiconductor b) A ...
Page 3
... IXYS reserves the right to change limits, conditions and dimensions. 2009 IXYS all rights reserved © 2.30 ±0.10 0.50 ±0.10 0.5 ±0.10 1.02 ±0.20 2.30 ±0.20 Data according to IEC 60747and per diode unless otherwise specified ...
Page 4
... A [µ 100 200 300 400 500 -di /dt [A/µs] F Fig. 7 Typ. recovery energy E versus -di /dt rec F IXYS reserves the right to change limits, conditions and dimensions. 2009 IXYS all rights reserved © 0 125° 200 0.2 [µ 0.1 0.0 0 100 ...