BYT30G-400 STMicroelectronics, BYT30G-400 Datasheet - Page 2

DIODE FAST REC 30A 400V D2PAK

BYT30G-400

Manufacturer Part Number
BYT30G-400
Description
DIODE FAST REC 30A 400V D2PAK
Manufacturer
STMicroelectronics
Datasheet

Specifications of BYT30G-400

Voltage - Forward (vf) (max) @ If
1.5V @ 30A
Voltage - Dc Reverse (vr) (max)
400V
Current - Average Rectified (io)
30A
Current - Reverse Leakage @ Vr
35µA @ 400V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
100ns
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BYT30G-400
Manufacturer:
ST
0
Part Number:
BYT30G-400-TR
Quantity:
343
Part Number:
BYT30G-400-TR
Manufacturer:
ST
0
BYT30G-400
THERMAL RESISTANCE
STATIC ELECTRICAL CHARACTERISTICS
Pulse test :
To evaluate the conduction losses use the following equation :
P = 1.1 x I
RECOVERY CHARACTERISTICS
TURN-OFF SWITCHING CHARACTERISTICS
PIN OUT configuration in D
2/5
Symbol
Symbol
Symbol
C factor
Symbol
Rth (j-c)
V
t
I
I
IRM
R
RM
t
F **
rr
*
F(AV)
* tp = 5 ms, < 2 %
** tp = 380 s, < 2 %
Reverse leakage current
Forward voltage drop
Reverse recovery
time
Maximum reverse
recovery time
Maximum reverse
recovery current
Turn-off
overvoltage
coefficient
Junction to case
+ 0.0095 I
Parameter
Parameter
Parameter
F
2
(RMS)
2
PAK:
T
Irr = 0.25 A
T
dI
j
j
T
I
V
Lp < 0.05 H
T
V
dI
F
= 25 C
= 25 C
F
/dt = -15A/ s
j
j
CC
CC
Parameter
F
= 30 A
= 100 C
= 100 C
/dt = -30A/ s
= 200 V
= 60 V
V
I
I
F
F
R
Test Conditions
= 30 A
= 30 A
Test Conditions
= V
Test Conditions
RRM
dI
dI
dI
dI
I
I
Lp = 1 H
I
V
F
F
R
I
F
F
F
F
F
R
= 0.5A
= 1A
= 1A
/dt = -120A/ s
/dt = -240A/ s
/dt = -120A/ s
/dt = -240A/ s
= I
30V
F(AV)
T
T
T
T
j
j
j
j
= 25 C
= 100 C
= 100 C
= 25 C
Min.
Min.
Min.
Value
Typ.
Typ.
Typ.
3.3
50
12
1
Max.
Max.
Max.
100
50
75
1.4
1.5
35
9
6
Unit
Unit
Unit
Unit
C/W
mA
ns
ns
ns
V
/
A

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