BYD17D,115 NXP Semiconductors, BYD17D,115 Datasheet - Page 6

• Manufacturer Part Number: BYD17D,115
• Description: DIODE AVAL GPP 1.5A 200V SOD87
• Manufacturer: NXP Semiconductors

Specifications of BYD17D,115

• Voltage - Forward (vf) (max) @ If: 1.05V @ 1A
• Voltage - Dc Reverse (vr) (max): 200V
• Current - Average Rectified (io): 1.5A
• Current - Reverse Leakage @ Vr: 1µA @ 200V
• Diode Type: Avalanche
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 3µs
• Capacitance @ Vr, F: 21pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: LLDL (SOD87)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-1661-2; 933812230115; BYD17D T/R

Philips Semiconductors
2001 Oct 26
handbook, full pagewidth
General purpose
controlled avalanche rectifiers
Input impedance oscilloscope: 1 M , 22 pF; t
Source impedance: 50 ; t
10
25 V
r
Fig.10 Test circuit and reverse recovery time waveform and definition.
+
15 ns.
50
DUT
1
r
7 ns.
(A)
6
I R
0.25
(A)
0.5
0.5
1.0
I F
0
t rr
BYD17 series
Product specification
MAM057
t