BYW80-200 STMicroelectronics, BYW80-200 Datasheet - Page 4

• Manufacturer Part Number: BYW80-200
• Description: DIODE FAST REC 200V 20A TO-220AC
• Manufacturer: STMicroelectronics

Specifications of BYW80-200

• Voltage - Forward (vf) (max) @ If: 1.15V @ 15A
• Voltage - Dc Reverse (vr) (max): 200V
• Current - Average Rectified (io): 10A
• Current - Reverse Leakage @ Vr: 10µA @ 200V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Mounting Type: Through Hole
• Package / Case: TO-220-2, TO-220AC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Other names: 497-2692-5

BYW80F/FP-200
4/7
Fig. 7: Non repetitive surge peak forward current
versus overload duration (ISOWATT220AC /
TO-220FPAC)
Fig. 9: Average current versus ambient tempera-
ture
TO-220FPAC)
12
11
10
Fig. 11: Recovery charges versus dI
80
70
60
50
40
30
20
10
0.001
9
8
7
6
5
4
3
2
1
0
0
0
I
I M(A)
F(av)(A)
QRR(nC)
IM
90% CONFIDENCE
=0.5
(duty
=tp/T
20
t
=0.5
T
0.01
40
cycle:
Rth(j-a)=15
tp
60
Tj=125
t(s)
dIF/dt(A/us)
0.5)
80
0.1
o
o
C
C/W
Tamb( C)
(ISOWATT220AC
100
Rth(j-a)=Rth(j-c)
o
120
F
1
/dt.
Tc=25
IF=IF(av)
Tc=95 C
140
Tc=50 C
o
o
o
160
C
10
/
Fig. 8: Average current versus ambient tempera-
ture (duty cycle : 0.5) (TO-220AC)
Fig. 10: Junction capacitance versus reverse volt-
age applied (Typical values)
Fig. 12: Peak reverse current versus dI
12
11
10
9
8
7
6
5
4
3
2
1
0
0
I RM(A)
I
C(pF)
F(av)(A)
90% CONFIDENCE
=0.5
=tp/T
20
T
40
tp
60
Rth(j-a)=15
Tj=125
dIF/dt(A/us)
VR(V)
80
o
Rth(j-a)=Rth(j-c)
C
Tamb( C)
o
100
C/W
o
120
F
/dt.
IF=IF(av)
140
160