BYW81P-200 STMicroelectronics, BYW81P-200 Datasheet - Page 4

• Manufacturer Part Number: BYW81P-200
• Description: DIODE FAST REC 15A 200V TO-220AC
• Manufacturer: STMicroelectronics

Specifications of BYW81P-200

• Voltage - Forward (vf) (max) @ If: 1.15V @ 25A
• Voltage - Dc Reverse (vr) (max): 200V
• Current - Average Rectified (io): 15A
• Current - Reverse Leakage @ Vr: 20µA @ 200V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 40ns
• Mounting Type: Through Hole
• Package / Case: TO-220-2, TO-220AC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -

BYW81P-200 / BYW81PI-200 / BYW81G-200
Fig. 11: Peak reverse current versus dI
3.0
2.5
2.0
1.5
1.0
0.5
0.0
4/6
Fig.
temperature.
(duty cycle : 0.5) (BYW81P)
16
15
14
13
12
11
10
Fig. 9: Junction capacitance versus reverse
voltage applied (Typical values).
120
115
110
105
100
9
8
7
6
5
4
3
2
1
0
95
90
85
80
0
I
1
1
F(av)(A)
C(pF)
IRM(A)
=0.5
90%CONFIDENCE
IF=IF(av)
=tp/T
7:
20
Rth(j-a)=15
Average
T
40
tp
60
o
C/W
Tamb( C)
Rth(j-a)=Rth(j-c)
current
80
VR(V)
1 0
10
o
100
F=1Mhz Tj=25 C
dIF/dt(A/us)
versus
20
120
Tj=100 C
30
Tj=25 C
F
40
/dt.
140
ambient
O
o
50
O
60 80
160
70
Fig.
temperature.
(duty cycle : 0.5) (BYW81PI / BYW81G)
16
15
14
13
12
11
10
Fig. 10: Recovery charges versus dI
60
50
40
30
20
10
Fig. 12: Dynamic parameters versus junction
temperature.
1.50
1.25
1.00
0.75
0.50
0.25
0.00
9
8
7
6
5
4
3
2
1
0
0
1
0
I
QRR(nC)
F(av)(A)
0
90%CONFIDENCE
IF=IF(av)
QRR;IRM[Tj]/QRR;IRM[Tj=125 C]
=0.5
=tp/T
8:
20
25
Average
T
40
Rth(j-a)=15
tp
50
60
Tj( C)
IRM
Tamb( C)
o
current
o
80
C/W
75
10
dIF/dt(A/us)
o
QRR
100
Rth(j-a)=Rth(j-c)
100
o
versus
Tj=100 C
20
120
F
Tj=25 C
/dt.
O
125
40
140
O
ambient
60 80
150
160