STPS1L60 STMicroelectronics, STPS1L60 Datasheet - Page 3
![DIODE SCHOTTKY LDO 1A 60V DO-41](/photos/5/36/53643/497-do-41__axial_series_sml.jpg)
STPS1L60
Manufacturer Part Number
STPS1L60
Description
DIODE SCHOTTKY LDO 1A 60V DO-41
Manufacturer
STMicroelectronics
Datasheet
1.STPS1L60A.pdf
(10 pages)
Specifications of STPS1L60
Voltage - Forward (vf) (max) @ If
570mV @ 1A
Voltage - Dc Reverse (vr) (max)
60V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
50µA @ 60V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Through Hole
Package / Case
DO-204AL, DO-41, Axial
Product
Schottky Rectifiers
Peak Reverse Voltage
60 V
Forward Continuous Current
1 A
Max Surge Current
40 A
Configuration
Single
Forward Voltage Drop
0.75 V at 2 A
Maximum Reverse Leakage Current
50 uA
Operating Temperature Range
+ 150 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STPS1L60
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
STPS1L60A
Manufacturer:
STMicroelectronics
Quantity:
55 714
Company:
Part Number:
STPS1L60A
Manufacturer:
TI
Quantity:
5 437
Company:
Part Number:
STPS1L60RL
Manufacturer:
ST
Quantity:
7 463
Company:
Part Number:
STPS1L60U
Manufacturer:
STMicroe
Quantity:
30 000
STPS1L60
Figure 1.
Figure 3.
Figure 5.
0.001
0.01
0.1
1
0.01
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
P
P
ARM
0
0.0
I F(AV) (A)
ARM
P F(AV) (W)
δ = t p / T
(1 µs)
(t p )
25
0.1
0.2
T
Average forward power dissipation
versus average forward current
Average forward current versus
ambient temperature (δ = 0.5)
(DO-41)
Normalized avalanche power
derating versus pulse duration
t p
δ = 0.05
0.4
50
1
T amb (°C)
I F(AV) (A)
R th(j-a) = R th(j-l)
t (µs)
R th(j-a) = 100 °C/W
δ = 0.1 δ = 0.2
p
0.6
75
10
0.8
100
δ = t p / T
δ = 0.5
1.0
125
100
T
DO-41
δ = 1
Doc ID 7504 Rev 8
t p
1.2
150
1000
Figure 2.
Figure 4.
Figure 6.
1.2
0.8
0.6
0.4
0.2
1
0
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.2
1.0
0.8
0.6
0.4
0.2
0.0
25
P
ARM
0
0
P
I F(AV) (A)
I F(AV) (A)
ARM
δ = t p / T
δ = t p / T
(25 °C)
(T j )
25
25
T
T
50
Average forward current versus
ambient temperature (δ = 0.5)
(SMA)
Average forward current versus
ambient temperature (δ = 0.5)
(STmite flat)
Normalized avalanche power
derating versus junction
temperature
t p
t p
R th(j-a) = 250 °C/W
50
50
75
T amb (°C)
R th(j-a) = R th(j-c)
T (°C)
R th(j-a) = 120 °C/W
75
j
75
R th(j-a) = R th(j-l)
100
100
100
T amb (°C)
Characteristics
125
125
125
STmite flat
SMA
150
150
3/10
150