STTA812D STMicroelectronics, STTA812D Datasheet - Page 3

• Manufacturer Part Number: STTA812D
• Description: DIODE TURBO 8A 1200V TO-220AC
• Manufacturer: STMicroelectronics
• Series: TURBOSWITCH™r

Specifications of STTA812D

• Voltage - Forward (vf) (max) @ If: 2.2V @ 8A
• Voltage - Dc Reverse (vr) (max): 1200V (1.2kV)
• Current - Average Rectified (io): 8A
• Current - Reverse Leakage @ Vr: 100µA @ 1200V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 100ns
• Mounting Type: Through Hole
• Package / Case: TO-220-2, TO-220AC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -

Fig. 1: Conduction losses versus average current.
20
18
16
14
12
10
Fig. 3: Relative variation of thermal impedance
junction to case versus pulse duration.
1.0
0.8
0.6
0.4
0.2
0.0
Fig. 5: Reverse recovery time versus dI
confidence).
550
500
450
400
350
300
250
200
150
100
8
6
4
2
0
50
1E-4
0
0
P1(W)
Zth(j-c)/Rth(j-c)
0
trr(ns)
= 0.5
= 0.2
Single pulse
= 0.1
100
2
1E-3
= 0.1
200
4
dIF/dt(A/µs)
IF(av) (A)
tp(s)
1E-2
IF=2*IF(av)
= 0.2
IF=0.5*IF(av)
300
6
= 0.5
1E-1
400
8
VR=600V
Tj=125°C
F
IF=IF(av)
/dt (90%
= 1
1E+0
500
10
Fig. 2: Forward voltage drop versus forward cur-
rent (maximum values).
100.0
Fig. 4:
dI
Fig. 6: Softness factor (tb/ta) versus dI
values).
50
40
30
20
10
1.40
1.20
1.00
0.80
10.0
0
1.0
0.1
F
0
IRM(A)
/dt (90% confidence).
0.0
0
VR=600V
Tj=125°C
S factor
IFM(A)
Tj=125°C
Peak reverse recovery current versus
100
100
1.0
200
200
2.0
dIF/dt(A/µs)
dIF/dt(A/µs)
VFM(V)
300
IF=2*IF(av)
300
3.0
STTA812D/DI/G
IF=0.5*IF(av)
400
4.0
400
VR=600V
IF<2*IF(av)
Tj=125°C
IF=IF(av)
F
/dt (typical
3/10
5.0
500
500