STGD10NC60HT4 STMicroelectronics, STGD10NC60HT4 Datasheet
STGD10NC60HT4
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STGD10NC60HT4 Summary of contents
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... RES IES susceptibility) Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the ™ PowerMESH IGBTs, with outstanding performances. The suffix "H" identifies a family optimized for high frequency applications in order to achieve very high switching performances (reduced tfall) manta in ing a low voltage drop ...
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Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
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STGD10NC60H 1 Electrical ratings Table 1. Absolute maximum ratings Symbol V Collector-emitter voltage (V CES (1) Collector current (continuous (1) Collector current (continuous (2) Collector current (pulsed Gate-emitter voltage ...
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Electrical characteristics 2 Electrical characteristics (T =25°C unless otherwise specified) CASE Table 3. Static Symbol Collector-emitter V BR(CES) breakdown voltage Collector cut-off current I CES ( Gate-emitter leakage I GES current (V V Gate threshold voltage GE(th) ...
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STGD10NC60H Table 5. Switching on/off (inductive load) Symbol t Turn-on delay time d(on) t Current rise time r Turn-on current slope (di/dt Turn-on delay time d(on) t Current rise time r Turn-on current slope (di/dt ...
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Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Output characteristics Figure 3. Transconductance Figure 5. Gate charge vs gate-source voltage Figure 6. 6/14 Figure 2. Transfer characteristics Figure 4. Collector-emitter on voltage vs temperature Capacitance variations STGD10NC60H ...
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STGD10NC60H Figure 7. Normalized gate threshold voltage vs temperature Figure 9. Normalized breakdown voltage vs temperature Figure 11. Switching losses vs gate resistance Figure 12. Switching losses vs collector Electrical characteristics Figure 8. Collector-emitter on voltage vs collector current Figure ...
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Electrical characteristics Figure 13. Thermal Impedance 8/14 Figure 14. Turn-off SOA STGD10NC60H ...
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STGD10NC60H 3 Test circuits Figure 15. Test circuit for inductive load switching Figure 17. Switching waveform Figure 16. Gate charge test circuit Test circuits 9/14 ...
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Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and ...
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STGD10NC60H DIM (L1 DPAK MECHANICAL DATA mm. MIN. TYP MAX. 2.2 2.4 0.9 1.1 0.03 0.23 0.64 0.9 5.2 5.4 0.45 ...
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Packaging mechanical data 5 Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE MECHANICAL DATA mm DIM. MIN. MAX 10.4 10.6 B1 12.1 D 1.5 1.6 D1 1.5 E 1.65 1.85 F 7.4 7.6 ...
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STGD10NC60H 6 Revision history Table 7. Revision history Date 02-Apr-2007 Revision 1 Initial release. Revision history Changes 13/14 ...
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... Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...