STGB10NC60KT4 STMicroelectronics, STGB10NC60KT4 Datasheet - Page 4

• Manufacturer Part Number: STGB10NC60KT4
• Description: IGBT N-CHAN 600V 10A D2PAK
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGB10NC60KT4

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 5A
• Current - Collector (ic) (max): 20A
• Power - Max: 60W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: 497-5737-2

Electrical characteristics
2.1
4/11
Figure 2.
Figure 4.
Table 7.
1. Eon is the tun-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a
2. Turn-off losses include also the tail of the collector current
Electrical characteristics (curves)
Output characteristics
Transconductance
Symbol
E
E
E
E
package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same
temperature (25°C and 125°C)
E
E
on
off
on
off
ts
ts
(1)
(2)
(1)
(2)
Turn-on switching losses
Turn-off switching losses
Total switching losses
Turn-on switching losses
Turn-off switching losses
Total switching losses
Switching energy (inductive load)
Parameter
Doc ID 11842 Rev 4
V
R
(see Figure 18)
V
R
Tj= 125°C
(see Figure 18)
CC
CC
G
G
= 10Ω, V
= 10Ω, V
Figure 3.
Figure 5.
= 390V, I
= 390V, I
Test conditions
GE
GE
C
C
=15V,
= 15V,
= 5A
= 5A
Transfer characteristics
Collector-emitter on voltage vs
temperature
Min
Typ
140
162
249
55
85
87
STGB10NC60K
Max Unit
µJ
µJ
µJ
µJ
µJ
µJ