STGP7NC60H STMicroelectronics, STGP7NC60H Datasheet - Page 2

• Manufacturer Part Number: STGP7NC60H
• Description: IGBT N-CHAN 25A 600V TO220
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGP7NC60H

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 7A
• Current - Collector (ic) (max): 25A
• Power - Max: 80W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 25 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Transistor Type: IGBT
• Dc Collector Current: 25A
• Collector Emitter Voltage Vces: 2.5V
• Power Dissipation Pd: 80W
• Collector Emitter Voltage V(br)ceo: 600V
• Transistor Case Style: TO-247
• No. Of Pins: 3
• Svhc: No SVHC
• Rohs Compliant: Yes
• Operating Temperature Range: -55°C To +150°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-4113-5

STGP7NC60H - STGD7NC60H
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Table 3: Absolute Maximum ratings
( )
Table 4: Thermal Data
ELECTRICAL CHARACTERISTICS (T
Table 5: Main Parameters
(#) Calculated according to the iterative formula:
I
C
Rthj-case
Rthj-amb
V
Symbol
V
Pulse width limited by max. junction temperature.
Symbol
V
I
BR(CES)
T
CM
I
CE(sat)
V
V
P
I
GE(th)
V
CES
GES
T
C
T
CES
ECR
I
I
TOT
T
GE
stg
C
C
L
( )
j
=
------------------------------------------------------------------------------------------------- -
R
THJ C
Collector-Emitter
Breakdown Voltage
Collector cut-off Current
(V
Gate-Emitter Leakage
Current (V
Gate Threshold Voltage
Collector-Emitter
Saturation Voltage
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature for Soldering
Purpose (1.6 mm from case, for 10 sec.)
Collector-Emitter Voltage (V
Emitter-Collector Voltage
Gate-Emitter Voltage
Collector Current (continuous) at T
Collector Current (continuous) at T
Collector Current (pulsed)
Total Dissipation at T
Derating Factor
Storage Temperature
Operating Junction Temperature
–
GE
= 0)
T
V
Parameter
JMAX
CESAT M AX
CE
–
= 0)
T
C
(
T
C
C
Parameter
= 25°C
I
C
I
V
V
V
V
V
V
)
C
CE
CE
GE
CE
GE
GE
GS
= 1 mA, V
CASE
= Max Rating, T
= Max Rating, T
= ± 20V , V
= V
= 15V, I
= 15V, I
= 0)
Test Conditions
GE
C
C
=25°C UNLESS OTHERWISE SPECIFIED)
, I
= 25°C (#)
= 100°C (#)
C
C
GE
C
= 7 A, Tc= 125°C
= 7 A
= 250 µA
= 0
CE
= 0
C
C
TO-220
DPAK
TO-220
DPAK
TO-220
DPAK
= 25 °C
= 125 °C
Min.
3.75
600
Min.
TO-220
0.64
80
– 55 to 150
Value
600
±20
Typ.
1.85
20
25
14
50
Typ.
1.7
300
275
DPAK
0.56
70
Max.
Max.
±100
1.56
1.78
62.5
5.75
100
2.5
10
1
W/°C
°C/W
°C/W
Unit
Unit
mA
µA
nA
°C
°C
W
V
V
V
A
A
A
V
V
V
V