STGW35HF60WD STMicroelectronics, STGW35HF60WD Datasheet - Page 6

• Manufacturer Part Number: STGW35HF60WD
• Description: IGBT 600V 60A 200W TO-247
• Manufacturer: STMicroelectronics

Specifications of STGW35HF60WD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 20A
• Current - Collector (ic) (max): 60A
• Power - Max: 200W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 60A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 497-10073-5

Electrical characteristics
6/12
Figure 8.
Figure 10. Switching losses vs temperature
Figure 12. Switching losses vs. collector
V
E (µJ)
E (µJ)
GE
1000
450
400
350
300
250
200
150
800
600
400
200
16
(V)
12
8
4
0
0
25
10
0
Gate charge vs. gate-emitter
voltage
current
15
30
50
20
E
V
ON
CC
I
60
C
V
R
= 20 A
CE
G
= 400 V
V
75
= 10 Ω, T
CE
I
= 400 V, V
25
C
= 20 A, R
= 400 V, V
E
90
OFF
E
30
J
ON
= 125 °C
GE
G
100
GE
=10 Ω
= 15 V
= 15 V
120
35
E
OFF
T
Q
J
I
125
(°C)
C
Doc ID 15592 Rev 5
G
40
(A)
150
(nC)
Figure 9.
Figure 11. Switching losses vs. gate
Figure 13. Turn-off SOA
C (pF)
E (µJ)
2000
1500
1000
5000
4000
3000
2000
1000
1000
I
500
C
100
0.1
(A)
10
0
0
1
0
0
1
C
res
Capacitance variations
resistance
10
60
C
oes
10
V
20
GE
V
120
I
= 15 V, R
f = 1 MHz
C
CE
T
V
= 20 A, T
C
GE
= 400 V, V
= 150 °C
= 0
E
30
OFF
G
100
STGW35HF60WD
J
= 10 Ω
180
= 125 °C
GE
= 15 V
C
40
ies
E
ON
R
V
g
V
CE
240
(Ω)
CE
1000
(V)
50
(V)