STGW30N120KD STMicroelectronics, STGW30N120KD Datasheet - Page 4

• Manufacturer Part Number: STGW30N120KD
• Description: IGBT 30A 1200V TO-247
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGW30N120KD

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.85V @ 15V, 20A
• Current - Collector (ic) (max): 60A
• Power - Max: 220W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: 497-7015-5

Electrical characteristics
2
4/13
Electrical characteristics
(T
Table 4.
Table 5.
V
Symbol
Symbol
V
V
CASE
(BR)CES
CE(sat)
I
I
C
GE(th)
C
C
Q
Q
CES
GES
g
Q
oes
ies
res
fs
ge
gc
g
=25 °C unless otherwise specified)
Collector-emitter
breakdown voltage
(V
Collector-emitter saturation
voltage
Gate threshold voltage
Collector cut-off current
(V
Gate-emitter leakage
current (V
Forward transconductance V
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
GE
GE
Static
Dynamic
= 0)
= 0)
Parameter
Parameter
CE
= 0)
I
V
V
Tc =125 °C
V
V
V
V
V
V
I
C
C
GE
GE
CE
CE
CE
GE
CE
CE
CE
= 20 A,V
= 1 mA
= V
= 15 V, I
= 15 V, I
=1200 V
=1200 V, Tc=125 °C
=± 20 V
= 25 V
= 25 V, f = 1 MHz, V
= 960 V,
Test conditions
Test conditions
GE
, I
GE
,
C
I
C
C
C
= 1mA
= 20 A
= 20 A,
=15 V
= 20 A
GE
=0
1200
Min.
Min.
4.5
Typ.
2520
Typ. Max.
2.8
2.7
170
105
20
STGW30N120KD
33
21
56
± 100
Max.
3.85
500
6.5
10
Unit
Unit
mA
nC
nC
nC
pF
pF
pF
µA
nA
V
V
V
V
S