STGW40NC60WD STMicroelectronics, STGW40NC60WD Datasheet - Page 3
![MOSFET N-CHAN 650V 40A TO-247](/photos/5/30/53058/to-247_sml.jpg)
STGW40NC60WD
Manufacturer Part Number
STGW40NC60WD
Description
MOSFET N-CHAN 650V 40A TO-247
Manufacturer
STMicroelectronics
Series
PowerMESH™r
Datasheet
1.STGW40NC60WD.pdf
(14 pages)
Specifications of STGW40NC60WD
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.5V @ 15V, 30A
Current - Collector (ic) (max)
70A
Power - Max
250W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3
Configuration
Single
Collector- Emitter Voltage Vceo Max
600 V
Collector-emitter Saturation Voltage
1.9 V/2.1 A
Maximum Gate Emitter Voltage
+/- 20 V
Gate-emitter Leakage Current
+/- 100 nA
Power Dissipation
250 W
Maximum Operating Temperature
+ 150 C
Continuous Collector Current Ic Max
70 A
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Transistor Type
IGBT
Dc Collector Current
70A
Collector Emitter Voltage Vces
2.5V
Power Dissipation Pd
250W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-5742
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STGW40NC60WD
Manufacturer:
ST
Quantity:
12 500
STGW40NC60WD
1
Electrical ratings
Table 2.
1.
2. Vclamp = 80%(V
3. Pulse width limited by max. junction temperature allowed
Table 3.
I
C
Symbol
(
Symbol
R
R
R
T
I
I
V
Calculated according to the iterative formula:
P
I
I
CP
C
CL
I
V
thj-case
thj-case
thj-amb
C
C
FSM
CES
)
TOT
I
T
GE
F
(1)
(1)
=
j
(2)
(3)
---------------------------------------------------------------------------------------------------
R
THJ C
–
Absolute maximum ratings
Thermal resistance
Collector-emitter voltage (V
Collector current (continuous) at 25 °C
Collector current (continuous) at 100 °C
Turn-off latching current
Pulsed collector current
Gate-emitter voltage
Diode RMS forward current at T
Surge non repetitive forward current
(tp=10 ms sinusoidal)
Total dissipation at T
Operating junction temperature
Thermal resistance junction-case max (IGBT)
Thermal resistance junction-case max (diode)
Thermal resistance junction-ambient max
×
T
V
JMAX
CESAT MAX
CES
), Tj = 150 °C, R
–
T
(
C
)
(
T
C
,
Parameter
I
C
Parameter
)
C
G
= 25 °C
= 10 Ω, V
GE
= 0)
C
GE
=25 °C
= 15 V
– 55 to 150
Value
600
230
±20
120
250
Value
230
70
40
30
0.5
1.5
50
Electrical ratings
°C/W
°C/W
°C/W
Unit
Unit
°C
W
V
A
A
A
A
V
A
A
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