STGW35NC60WD STMicroelectronics, STGW35NC60WD Datasheet - Page 4

• Manufacturer Part Number: STGW35NC60WD
• Description: IGBT N-CH 40A 600V TO-247
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGW35NC60WD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.6V @ 15V, 20A
• Current - Collector (ic) (max): 70A
• Power - Max: 260W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 70A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Transistor Type: IGBT
• Dc Collector Current: 70A
• Collector Emitter Voltage Vces: 2.5V
• Power Dissipation Pd: 250W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 497-7488-5; STGW35NC60WD

Short-circuit rugged IGBTs (switching frequency up to 50 kHz)
3. Samples available from Q4 2009
STGF10HF60KD
STGF14HF60KD
STGD10HF60KDT4
STGB10HF60KDT4
STGP10HF60KD
STGP14HF60KD
STGD8NC60KT4
STGD8NC60KDT4
STGB8NC60KDT4
STGB10NC60KT4
STGB10NC60KDT4
STGD10NC60KT4
STGD10NC60KDT4
STGD14NC60KT4
STGB8NC60KT4
STGB14NC60KT4
STGB14NC60KDT4
STGB19NC60KDT4
STGB30NC60KT4
STGF8NC60KD
STGF10NC60KD
STGF14NC60KD
STGF19NC60KD
STGP8NC60K
STGP8NC60KD
STGP10NC60K
STGP10NC60KD
STGP14NC60KD
STGP19NC60KD
STGP30NC60K
STGW30NC60KD
STGW40NC60KD
STGW30N120KD
STGW40N120KD
Part number
Part number
3
3
3
3
3
3
Voltage
V
Voltage
V
CES
CES
1200
600
600
(V)
(V)
Advanced planar PT technology (new generation)
TO-220FP
TO-220FP
Package
Package
TO-220
TO-220
TO-247
TO-247
D
D
DPAK
DPAK
2
2
PAK
PAK
Planar PT technology
I
I
C
C
at T
at T
Current
Current
C
C
(A)
(A)
10
10
10
14
10
10
14
10
10
14
14
20
26
10
10
10
14
20
26
28
38
30
40
= 100 °C
6
7
= 100 °C
8
8
8
8
4
6
7
8
8
V
V
T
T
CE(sat)
CE(sat)
C
C
1.6
1.8
1.6
1.6
1.6
1.8
1.8
1.8
1.8
1.8
1.8
1.8
1.8
1.8
1.8
1.8
1.8
1.8
1.9
1.8
1.8
1.8
1.8
1.8
1.8
1.8
1.8
1.8
1.8
1.9
1.9
1.9
2.7
2.7
= 150 °C, V
= 125 °C, V
On voltage at
On voltage at
(V)
(V)
GE
GE
= 15 V
= 15 V
I
I
C
C
12
20
12
12
20
20
30
20
30
5
7
5
5
5
7
3
3
5
3
3
5
5
7
7
5
7
3
5
7
3
3
5
5
7
(A)
(A)
Anti-parallel
Anti-parallel
diode
diode
Y
Y
Y
Y
Y
Y
Y
Y
Y
Y
Y
Y
Y
Y
Y
Y
Y
Y
Y
Y
Y
Y
Y
Y