IXGT30N120B3D1 IXYS, IXGT30N120B3D1 Datasheet - Page 2

IGBT PT 1200V 30A W/DIODE TO268

IXGT30N120B3D1

Manufacturer Part Number
IXGT30N120B3D1
Description
IGBT PT 1200V 30A W/DIODE TO268
Manufacturer
IXYS
Series
GenX3™r
Datasheet

Specifications of IXGT30N120B3D1

Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.5V @ 15V, 30A
Current - Collector (ic) (max)
30A
Power - Max
300W
Input Type
Standard
Mounting Type
Surface Mount
Package / Case
TO-268
Collector-emitter Voltage
1.2kV
Collector Current (dc) (max)
50A
Package Type
TO-268
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Vces, (v)
1200
Ic25, Tc=25°c, Igbt, (a)
50
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
30
Vce(sat), Max, Tj=25°c, Igbt, (v)
3.5
Tfi, Typ, Tj=25°c, Igbt, (ns)
204
Eoff, Typ, Tj=125°c, Igbt, (mj)
5.10
Rthjc, Max, Igbt, (°c/w)
0.42
If, Tj=110°c, Diode, (a)
28
Rthjc, Max, Diode, (ºc/w)
0.9
Package Style
TO-268
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXGT30N120B3D1
Manufacturer:
IXYS
Quantity:
2 000
Symbol
(T
g
C
C
C
Q
Q
Q
t
t
E
t
E
t
t
E
t
t
E
R
R
Reverse Diode (FRED)
Symbol
V
I
t
R
Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,850,072
t
RM
d(on)
ri
fi
d(on)
ri
d(off)
fi
rr
fs
d(off)
on
off
on
off
ies
oes
res
thJC
thCS
F
thJC
g
ge
gc
J
= 25°C, unless otherwise specified)
2. Switching times may increase for V
higher T
I
V
I
Inductive load, T
I
V
Inductive load, T
I
V
I
I
Test Conditions
C
C
C
C
Test Conditions
F
F
V
CE
CE
CE
= 30A, V
= 30A,V
= 30A,V
R
= 30A,V
J
= 30A, V
= 25V, V
= 30A, V
= 300V
or increased R
= 0.8 • V
= 0.8 • V
GE
GE
GE
GE
CE
GE
GE
CES
CES
= 0V, Note 1
= 0V, -di
= 15V, Notes 2
= 15V, Notes 2
= 10V, Note 1
= 0V, f = 1MHz
= 15V, V
, R
,R
4,835,592
4,881,106
J
G
G
J
G
= 25° ° ° ° ° C
= 5Ω
= 125° ° ° ° ° C
.
= 5Ω
F
/dt = 100A/μs, T
CE
4,931,844
5,017,508
5,034,796
= 0.5 • V
CE
(Clamp) > 0.8 V
CES
5,049,961
5,063,307
5,187,117
(T
J
T
T
= 25°C, unless otherwise specified)
J
J
J
= 150°C
= 100°C
= 100°C
5,237,481
5,381,025
5,486,715
Min.
CES
11
,
Characteristic Values
Min.
Characteristic Values
6,162,665
6,259,123 B1
6,306,728 B1
1750
3.47
2.16
6.70
5.10
0.21
Typ.
204
216
255
120
127
19
46
87
15
39
16
37
18
38
100
1.6
Typ.
0.42 °C/W
Max.
200
380
6,404,065 B1
6,534,343
6,583,505
4.0
0.9 °C/W
2.8
Max.
4
°C/W
mJ
mJ
mJ
mJ
nC
nC
nC
pF
pF
ns
pF
ns
ns
ns
ns
ns
ns
ns
ns
S
V
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-247 AD Outline
TO-268 Outline
6,727,585
6,771,478 B2 7,071,537
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
1
2
1
2
IXGH30N120B3D1
IXGT30N120B3D1
20.80
15.75
19.81
1.65
2.87
5.20
3.55
5.89
4.32
Min.
4.7
2.2
2.2
1.0
Millimeter
.4
7,005,734 B2
7,063,975 B2
21.46
16.26
20.32
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
5.3
2.6
1.4
.8
e
∅ P
0.205 0.225
0.232 0.252
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
Inches
7,157,338B2
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216

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