IXSP10N60B2D1 IXYS, IXSP10N60B2D1 Datasheet - Page 2

• Manufacturer Part Number: IXSP10N60B2D1
• Description: IGBT HS W/DIODE 600V 20A TO220AB
• Manufacturer: IXYS

Specifications of IXSP10N60B2D1

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 10A
• Current - Collector (ic) (max): 20A
• Power - Max: 100W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220AB
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 20A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-220AB
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 10
• Ic90, Tc=90°c, Igbt, (a): -
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.5
• Tfi, Typ, Igbt, (ns): 165
• Eoff, Typ, Tj=125°c, Igbt, (mj): 0.79
• Rthjc, Max, Igbt, (k/w): 1.25
• Package Style: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
g
C
C
C
Q
Q
Q
t
t
t
t
E
t
t
E
t
t
E
R
R
Note 1:
Reverse Diode (FRED)
Symbol
V
I
t
t
R
IXYS reserves the right to change limits, test conditions, and dimensions.
d(on)
ri
d(off)
fi
d(on)
ri
d(off)
fi
RM
rr
rr
fs
off
on
off
ies
oes
res
g
ge
gc
thJC
thCS
F
thJC
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
I
I
V
I
F
F
F
R
= 12A, V
= 10A, V
= 1 A; -di/dt = 100 A/µs; V
= 100 V
Test Conditions
I
V
I
TO-220
Test Conditions
C
f = 1 MHz
C
Inductive load, T
I
V
Switching times may increase for V
(Clamp) > 0.8 • V
increased R
C
CE
Inductive load, T
I
V
Switching times may increase for
V
or increased R
= 10A; V
= 10A, V
CE
C
= 10A, V
CE
CE
= 10 A, V
= 25 V, V
= 0.8 V
= 0.8 V
(Clamp) > 0.8 • V
GE
GE
= 0 V, -di
= 0 V
GE
CE
GE
CES
G
CES
GE
GE
= 15 V, V
= 10 V, Note 1
= 15 V
, R
= 15 V
, R
= 0 V
G
G
CES
F
J
G
/dt = 100 A/µs
= 30 Ω
J
4,835,592
4,850,072
4,881,106
= 25° ° ° ° ° C
= 30 Ω
, higher T
= 125° ° ° ° ° C
CE
CES
R
= 0.5 V
= 30 V
, higher T
4,931,844
5,017,508
5,034,796
(T
J
(T
or
J
J
CES
= 25°C, unless otherwise specified)
= 25°C, unless otherwise specified)
CE
J
5,049,961
5,063,307
5,187,117
T
T
T
J
J
J
= 100°C
= 100°C
=150°C
min.
min.
2.0
Characteristic Values
Characteristic Values
5,237,481
5,381,025
5,486,715
0.32
0.25
typ.
typ.
400
180
165
430
260
270
790
1.5
3.6
7.5
90
25
50
11
17
30
30
30
30
6
6,162,665
6,259,123 B1
6,306,728 B1
max.
1.25 K/W
1.66
2.66
750
max.
2.5 K/W
K/W
nC
nC
nC
mJ
pF
pF
pF
ns
ns
ns
ns
µJ
ns
ns
ns
ns
µJ
ns
ns
S
V
V
A
6,404,065 B1
6,534,343
6,583,505
TO-220 AB (IXSP) Outline
TO-263 (IXSA) Outline
6,683,344
6,710,405B2
6,710,463
Dim.
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
Dim.
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
IXSA 10N60B2D1
IXSP 10N60B2D1
12.70
14.73
9.91
3.54
5.85
2.54
1.15
2.79
0.64
2.54
4.32
1.14
0.35
2.29
Min.
14.61
Min.
Millimeter
4.06
2.03
0.51
1.14
0.46
1.14
8.64
7.11
9.65
6.86
2.54
2.29
1.02
1.27
0.46
Millimeter
0
6,727,585
13.97
16.00
10.66
Max.
BSC
4.08
6.85
3.18
1.65
5.84
1.01
4.82
1.39
0.56
2.79
10.29
15.88
Max.
BSC
4.83
2.79
0.99
1.40
0.74
1.40
9.65
8.13
8.13
2.79
1.40
1.78
0.38
0.74
0.500
0.580
0.390
0.139
0.230
0.100
0.045
0.110
0.025
0.100
0.170
0.045
0.014
0.090
Min.
Min.
.160
.080
.020
.045
.018
.045
.340
.280
.380
.270
.100
.575
.090
.040
.050
.018
Inches
Inches
0
0.550
0.630
0.420
0.161
0.270
0.125
0.065
0.230
0.040
0.190
0.055
0.022
0.110
Max.
Max.
BSC
BSC
.190
.110
.039
.055
.029
.055
.380
.320
.405
.320
.625
.110
.055
.070
.015
.029