IXSA10N60B2D1 IXYS, IXSA10N60B2D1 Datasheet - Page 5
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IXSA10N60B2D1
Manufacturer Part Number
IXSA10N60B2D1
Description
IGBT HS W/DIODE 600V 20A TO263
Manufacturer
IXYS
Datasheet
1.IXSP10N60B2D1.pdf
(6 pages)
Specifications of IXSA10N60B2D1
Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.5V @ 15V, 10A
Current - Collector (ic) (max)
20A
Power - Max
100W
Input Type
Standard
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Collector Current (dc) (max)
20A
Gate To Emitter Voltage (max)
±20V
Package Type
TO-263
Pin Count
2 +Tab
Mounting
Surface Mount
Operating Temperature (min)
-55
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
10
Ic90, Tc=90°c, Igbt, (a)
-
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.5
Tfi, Typ, Igbt, (ns)
165
Eoff, Typ, Tj=125°c, Igbt, (mj)
0.79
Rthjc, Max, Igbt, (k/w)
1.25
Package Style
TO-263 (D2 PAK)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXSA10N60B2D1
Manufacturer:
IXYS
Quantity:
18 000
1000
100
340
320
300
280
260
240
220
200
180
160
140
120
10
1
1.4
1.2
0.8
0.6
0.4
0.2
1
0
25
0
0.1
t
t
R
V
V
f = 1 MHz
d(off)
fi
Sw itching Tim e on Tem pe rature
GE
CE
35
G
Fig. 13. Depe nde nce of Turn-off
5
- - - - - -
= 30Ω
= 15V
= 480V
45
Fig. 15. Capacitance
10
T
I
C
J
55
- Degrees Centigrade
= 10A
15
V
65
I
C E
C
= 20A
20
- Volts
75
5A
I
C
85
Fig. 17. Maxim um Trans ient The rm al Res istance
25
1
= 5A
20A
95
C
30
C
C
oes
105 115 125
ies
res
35
Pulse Width - milliseconds
40
1 0
22
20
18
16
14
12
10
16
14
12
10
8
6
4
2
0
8
6
4
2
0
100 150 200 250 300 350 400 450 500 550 600
0
V
I
I
T
R
dV/dT < 10V/ns
C
G
CE
J
2
G
= 1 0A
= 1 0mA
Fig. 16. Reve rs e-Bias Safe
= 125
= 82Ω
= 300V
Fig. 14. Gate Charge
4
º
C
Operating Are a
Q
6
G
V
- nanoCoulombs
1 00
C E
IXSA 10N60B2D1
IXSP 10N60B2D1
8
- Volts
10
12
14
16
1 000
18