IXSQ20N60B2D1 IXYS, IXSQ20N60B2D1 Datasheet - Page 4

• Manufacturer Part Number: IXSQ20N60B2D1
• Description: IGBT HS W/DIODE 600V 35A TO-3P
• Manufacturer: IXYS

Specifications of IXSQ20N60B2D1

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 16A
• Current - Collector (ic) (max): 35A
• Power - Max: 190W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-3P
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 35
• Ic90, Tc=90°c, Igbt, (a): -
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.5
• Tfi, Typ, Igbt, (ns): 126
• Eoff, Typ, Tj=125°c, Igbt, (mj): 0.97
• Rthjc, Max, Igbt, (k/w): 0.66
• Package Style: TO-3P
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

450
400
350
300
250
200
150
100
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
9
8
7
6
5
4
3
2
1
0
10
0
8
I
t
t
T
V
V
C
d(off)
fi
Fig. 11. De pe nde nce of Turn-off
J
GE
CE
20
R
V
V
Fig. 9. Dependence of Turn-Off
= 8A
= 125
GE
CE
- - - - -
Fig. 7. Transconductance
G
10
12
= 15V
= 400V
= 10Ω
= 15V
= 400V
30
Sw itching Tim e on R
º
C
Energy Los s on I
20
16
40
T
I
J
I
C
R
C
= -40
- Amperes
125
G
- Amperes
50
25
- Ohms
º
º
30
20
º
C
C
C
60
40
70
24
I
C
T
T
C
J
J
G
= 16A
= 125
= 25
80
50
28
º
C
º
I
C
90
C
= 32A
100
60
32
260
240
220
200
180
160
140
120
100
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
80
60
10
25
8
T
R
V
V
Fig. 10. De pe nde nce of Turn-off
Fig. 12. De pe nde nce of Turn-off
J
35
Fig. 8. Dependence of Turn-off
T
V
V
20
Ene rgy Loss on Tem perature
GE
CE
G
= 25
J
GE
CE
12
= 125
= 10Ω
= 15V
= 400V
45
= 15V
= 400V
º
30
Sw itching Tim e on I
C
T
Energy Los s on R
º
J
C
55
- Degrees Centigrade
16
40
T
I
J
R
C
65
= 125
- Amperes
G
50
IXSH 20N60B2D1
- Ohms
75
20
º
C
60
85
70
24
I
I
I
G
C
95
C
C
t
t
R
V
V
d(off)
fi
= 8A
C
GE
CE
= 32A
= 16A
I
G
I
C
C
I
80
C
- - - - -
= 10Ω
105 115 125
= 32A
= 15V
= 400V
= 16A
= 8A
28
90
100
32