IXGH20N120A3 IXYS, IXGH20N120A3 Datasheet - Page 4
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IXGH20N120A3
Manufacturer Part Number
IXGH20N120A3
Description
IGBT PT 1200V 20A TO-247
Manufacturer
IXYS
Series
GenX3™r
Datasheet
1.IXGP20N120A3.pdf
(6 pages)
Specifications of IXGH20N120A3
Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.5V @ 15V, 20A
Current - Collector (ic) (max)
40A
Power - Max
180W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247
Vces, (v)
1200
Ic25, Tc=25°c, Igbt, (a)
40
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
20
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.5
Tfi, Typ, Tj=25°c, Igbt, (ns)
715
Eoff, Typ, Tj=125°c, Igbt, (mj)
10.1
Rthjc, Max, Igbt, (°c/w)
0.69
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
100
1.00
0.10
0.01
16
14
12
10
10
0.00001
8
6
4
2
0
0
0
f
= 1MHz
5
5
10
10
Fig. 7. Transconductance
15
T
0.0001
J
Fig. 9. Capacitance
= - 40ºC
15
I
V
C
20
CE
- Amperes
C res
- Volts
20
25ºC
25
125ºC
C oes
25
30
C ies
Fig. 11. Maximum Transient Thermal Impedance
0.001
30
35
35
40
Pulse Width - Seconds
45
40
0.01
16
14
12
10
45
40
35
30
25
20
15
10
8
6
4
2
0
5
0
200
0
V
I
I
T
R
dv / dt < 10V / ns
IXGA20N120A3 IXGP20N120A3
C
G
CE
300
J
G
= 20A
= 10 mA
5
= 125ºC
= 600V
= 10Ω
Fig. 10. Reverse-Bias Safe Operating Area
400
10
0.1
500
15
Fig. 8. Gate Charge
Q
600
20
G
- NanoCoulombs
V
CE
700
25
- Volts
800
30
IXGH20N120A3
1
900
35
1000
40
1100
45
1200
50
10