IXGH30N120C3H1 IXYS, IXGH30N120C3H1 Datasheet - Page 4

• Manufacturer Part Number: IXGH30N120C3H1
• Description: IGBT PT 1200V 48A TO-247AD
• Manufacturer: IXYS
• Series: GenX3™r

Specifications of IXGH30N120C3H1

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 4.2V @ 15V, 24A
• Current - Collector (ic) (max): 48A
• Power - Max: 250W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Vces, (v): 1200
• Ic25, Tc=25°c, Igbt, (a): 48
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): -
• Vce(sat), Max, Tj=25°c, Igbt, (v): 4.2
• Tfi, Typ, Tj=25°c, Igbt, (ns): 42
• Eoff, Typ, Tj=125°c, Igbt, (mj): 1.30
• Rthjc, Max, Igbt, (°c/w): 0.50
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): 0.90
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
10,000
1,000
100
1.00
0.10
0.01
24
22
20
18
16
14
12
10
10
0.00001
8
6
4
2
0
0
0
5
f
= 1 MHz
5
10
15
Fig. 7. Transconductance
10
20
Fig. 9. Capacitance
0.0001
T
15
25
J
I
= - 40ºC
V
C
CE
- Amperes
30
20
- Volts
25ºC
125ºC
35
40
Fig. 11. Maximum Transient Thermal Impedance
25
C ies
C oes
C res
45
0.001
30
50
55
35
60
Pulse Width - Seconds
65
40
0.01
16
14
12
10
70
60
50
40
30
20
10
8
6
4
2
0
0
200
0
Fig. 10. Reverse-Bias Safe Operating Area
V
I
I
T
R
dV / dt < 10V / ns
C
G
CE
10
J
G
= 24A
= 10mA
= 125ºC
= 5Ω
= 600V
400
20
0.1
Fig. 8. Gate Charge
IXGH30N120C3H1
Q
30
600
G
- NanoCoulombs
V
CE
40
- Volts
800
50
IXYS REF: G_30N120C3H1(4A)03-10-09
1
60
1000
70
1200
80
10