IXGA24N120C3 IXYS, IXGA24N120C3 Datasheet - Page 3

• Manufacturer Part Number: IXGA24N120C3
• Description: IGBT PT 1200V 48A TO-263
• Manufacturer: IXYS
• Series: GenX3™r

Specifications of IXGA24N120C3

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 4.2V @ 15V, 20A
• Current - Collector (ic) (max): 48A
• Power - Max: 250W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (3 leads + tab)
• Vces, (v): 1200
• Ic25, Tc=25°c, Igbt, (a): 48
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): -
• Vce(sat), Max, Tj=25°c, Igbt, (v): 4.2
• Tfi, Typ, Tj=25°c, Igbt, (ns): 110
• Eoff, Typ, Tj=125°c, Igbt, (mj): 1.18
• Rthjc, Max, Igbt, (°c/w): 0.50
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-263
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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8.0
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
50
45
40
35
30
25
20
15
10
50
45
40
35
30
25
20
15
10
5
0
5
0
0.0
0.0
5
0.5
0.5
6
Fig. 5. Collector-to-Emitter Voltage
1.0
1.0
Fig. 1. Output Characteristics
Fig. 3. Output Characteristics
7
vs. Gate-to-Emitter Voltage
1.5
1.5
8
2.0
2.0
V
V
V
I
9
CE
CE
GE
C
@ 125ºC
@ 25ºC
2.5
2.5
= 48A
- Volts
- Volts
- Volts
12A
24A
10
3.0
3.0
11
V
GE
3.5
3.5
V
GE
= 15V
12
13V
11V
= 15V
4.0
4.0
13V
11V
T
J
13
= 25ºC
4.5
4.5
9V
7V
5V
9V
5V
7V
14
5.0
5.0
5.5
5.5
15
180
160
140
120
100
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
80
60
40
20
60
55
50
45
40
35
30
25
20
15
10
0
5
0
-50
4.0
0
IXGA24N120C3 IXGH24N120C3
V
2
GE
4.5
Fig. 2. Extended Output Characteristics
-25
= 15V
4
Fig. 4. Dependence of V
5.0
6
0
Fig. 6. Input Admittance
Junction Temperature
5.5
T
V
8
GE
J
- Degrees Centigrade
25
10
= 15V
6.0
V
V
CE
GE
@ 25ºC
12
- Volts
- Volts
13V
6.5
11V
50
9V
7V
I
14
I
I
C
C
C
IXGP24N120C3
= 48A
T
= 24A
= 12A
J
7.0
16
75
= - 40ºC
125ºC
25ºC
18
CE(sat)
7.5
100
20
8.0
on
22
125
8.5
24
150
9.0
26