IXBF12N300 IXYS, IXBF12N300 Datasheet - Page 4

• Manufacturer Part Number: IXBF12N300
• Description: IGBT 3000V 22A 100W ISOPLUSI4
• Manufacturer: IXYS
• Series: BIMOSFET™r

Specifications of IXBF12N300

• Voltage - Collector Emitter Breakdown (max): 3000V
• Vce(on) (max) @ Vge, Ic: 3.2V @ 15V, 12A
• Current - Collector (ic) (max): 22A
• Power - Max: 100W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: ISOPLUS i4-PAC™
• Vces, (v): 3000
• Ic25, Tc=25°c, (a): 22
• Ic90, Tc=90°c, (a): 12
• Vce(sat), Typ, Tj=25°c, (v): 3.2
• Tf Typ, Tj=25°c, (ns): 540
• Gate Drive, (v): 15
• Rthjc, Max, (k/w): 1.25
• Package Style: ISOPLUS I4-PAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
18
16
14
12
10
16
14
12
10
35
30
25
20
15
10
8
6
4
2
0
5
0
8
6
4
2
0
500
0
0
V
I
I
5
T
R
dv / dt < 10V / ns
C
G
CE
J
G
5
= 12A
= 10mA
= 125ºC
= 30Ω
= 1kV
10
Fig. 11. Reverse-Bias Safe Operating Area
1000
10
15
Fig. 7. Transconductance
20
15
Fig. 9. Gate Charge
Q
25
1500
G
- NanoCoulombs
I
V
C
20
CE
- Amperes
30
- Volts
35
25
2000
40
T
J
= - 40ºC
30
45
125ºC
25ºC
50
35
2500
55
40
60
3000
65
45
10,000
10.00
1,000
1.00
0.10
0.01
100
0.00001
10
36
32
28
24
20
16
12
8
4
0
0.0
0
f = 1 MHz
Fig. 12. Maximum Transient Thermal Impedance
5
0.0001
0.5
Fig. 8. Forward Voltage Drop of
10
0.001
1.0
Pulse Width - Seconds
Fig. 10. Capacitance
15
Intrinsic Diode
C oes
C res
C ies
T
V
V
J
CE
F
= 25ºC
- Volts
0.01
1.5
- Volts
20
IXBF12N300
25
0.1
2.0
30
T
J
= 125ºC
2.5
1
35
3.0
10
40