STGD7NB120S-1 STMicroelectronics, STGD7NB120S-1 Datasheet
STGD7NB120S-1
Specifications of STGD7NB120S-1
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STGD7NB120S-1 Summary of contents
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... This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. N-CHANNEL 7A - 1200V - IPAK I CE(sat) C < 2 cesat Parameter = 25° 100° 25°C C STGD7NB120S-1 PowerMESH™ IGBT PRELIMINARY DATA IPAK INTERNAL SCHEMATIC DIAGRAM Value 1200 20 ± 0.4 –65 to 150 ...
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... STGD7NB120S-1 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max Rthc-h Thermal Resistance Case-heatsink Typ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol Parameter Collectro-Emitter Breakdown V BR(CES) Voltage Emitter-Collectro Breakdown V BR(ECR) Voltage Collector cut-off I CES ( Gate-Emitter Leakage ...
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... Turn-off Switching Loss off Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1 Pulse width limited by max. junction temperature. (**)Losses include Also the Tail (Jedec Standardization) Test Conditions Min 960 960 125 °C STGD7NB120S-1 Typ. Max. Unit 4.9 s 2 7.5 s 5 3/6 ...
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... STGD7NB120S-1 Fig. 1: Gate Charge test Circuit 4/6 Fig. 2: Test Circuit For Inductive Load Switching ...
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... STGD7NB120S-1 inch TYP. MAX. 0.094 0.043 0.051 0.031 0.212 0.033 0.012 0.037 0.023 0.023 0.244 0.260 0.181 0.641 0.370 0.047 0.031 0.039 0068771-E ...
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... STGD7NB120S-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...