STGB10NB37LZ STMicroelectronics, STGB10NB37LZ Datasheet - Page 6
STGB10NB37LZ
Manufacturer Part Number
STGB10NB37LZ
Description
IGBT 10A C410V CLAMPED D2PAK
Manufacturer
STMicroelectronics
Series
PowerMESH™r
Datasheet
1.STGB10NB37LZT4.pdf
(15 pages)
Specifications of STGB10NB37LZ
Voltage - Collector Emitter Breakdown (max)
440V
Vce(on) (max) @ Vge, Ic
1.8V @ 4.5V, 10A
Current - Collector (ic) (max)
20A
Power - Max
125W
Input Type
Logic
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Channel Type
N
Configuration
Single
Collector-emitter Voltage
375V
Collector Current (dc) (max)
20A
Gate To Emitter Voltage (max)
12V
Pin Count
2 +Tab
Mounting
Surface Mount
Operating Temperature (max)
175C
Operating Temperature Classification
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STGB10NB37LZT4
Manufacturer:
DIODES
Quantity:
15 000
Electrical characteristics
2.1
6/15
Figure 2.
Figure 4.
Figure 6.
Electrical characteristics (curves)
Output characteristics
Transconductance
Gate charge vs gate-source voltage Figure 7.
Doc ID 7402 Rev 4
Figure 3.
Figure 5.
Transfer characteristics
Collector-emitter on voltage vs
temperature
Capacitance variations
STGB10NB37LZ, STGP10NB37LZ