IXGA12N120A2 IXYS, IXGA12N120A2 Datasheet - Page 5

• Manufacturer Part Number: IXGA12N120A2
• Description: IGBT 5KHZ SW 1200V 24A TO-263
• Manufacturer: IXYS

Specifications of IXGA12N120A2

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3V @ 15V, 12A
• Current - Collector (ic) (max): 24A
• Power - Max: 75W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Vces, (v): 1200
• Ic25, Tc=25°c, Igbt, (a): 24
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 12
• Vce(sat), Max, Tj=25°c, Igbt, (v): 3
• Tfi, Typ, Tj=25°c, Igbt, (ns): 650
• Eoff, Typ, Tj=125°c, Igbt, (mj): 7.7
• Rthjc, Max, Igbt, (°c/w): 1.66
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-263 (D2 PAK)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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1000
100
10.00
16
14
12
10
10
1.00
0.10
8
6
4
2
0
1
0
0
0.1
2
V
I
I
f = 1 MHz
C
G
CE
5
= 1 2A
= 1 0mA
4
= 600V
Fig. 15. Capacitance
Fig. 13. Gate Charge
10
6
Q
8
G
15
- nanoCoulombs
V
10 12 14 16 18 20 22 24
C E
20
- Volts
Fig. 17. Maxim um Transient Therm al Resistance
25
1
C
30
C
C
ies
oes
res
35
Pulse Width - milliseconds
40
10
30
25
20
15
10
5
0
100
T
R
dV/dT < 10V/ns
J
G
300
Fig. 14. Reverse-Bias Safe
= 125
= 100Ω
º
C
Operating Area
500
V
C E
100
700
- Volts
IXGA12N120A2
IXGP12N120A2
900
1100
1300
1000