IXSQ10N60B2D1 IXYS, IXSQ10N60B2D1 Datasheet
Home Discrete Semiconductor Products IGBTs - Single IXSQ10N60B2D1
Manufacturer Part Number
IXSQ10N60B2D1
Description
IGBT HS W/DIODE 600V 20A TO-3P
Specifications of IXSQ10N60B2D1
Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.5V @ 15V, 10A
Current - Collector (ic) (max)
20A
Power - Max
100W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-3P
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
10
Ic90, Tc=90°c, Igbt, (a)
-
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.5
Tfi, Typ, Igbt, (ns)
165
Eoff, Typ, Tj=125°c, Igbt, (mj)
0.79
Rthjc, Max, Igbt, (k/w)
1.25
Package Style
TO-3P
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Part Number:
IXSQ10N60B2D1
High Speed IGBT
with Diode
Short Circuit SOA Capability
Preliminary Data Sheet
Symbol
V
V
V
V
I
I
I
I
SSOA
(RBSOA)
t
(SCSOA)
P
T
T
T
M
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
© 2004 IXYS All rights reserved
Symbol
BV
V
I
I
V
C25
C110
F(110)
CM
SC
CES
GES
J
JM
stg
CES
CGR
GES
GEM
C
GE(th)
d
CE(sat)
CES
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load, V
V
R
T
Mounting torque
TO-247
TO-3P
Test Conditions
I
I
V
V
V
I
C
C
C
C
C
C
C
J
J
GE
GE
G
CE
GE
CE
= 150 Ω, non repetitive
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 110°C
= 25°C, 1 ms
= 15 V, T
= 15 V, V
= 25°C
= 250 µA, V
= 750 µA, V
= V
= 0 V
= 0 V, V
= 10A, V
CES
CE
J
GE
= 125°C, R
GE
= 360 V, T
= ± 20 V
GE
CE
= 15 V
= 0 V
= V
GE
GE
= 1 MΩ
G
J
GE
= 125°C
= 82Ω
= 20 V
(T
IXSH 10N60B2D1
IXSQ 10N60B2D1
J
= 25°C, unless otherwise specified)
min.
600
4.0
Characteristic Values
-55 ... +150
-55 ... +150
@ 0.8 V
Maximum Ratings
I
typ.
CM
1.3/10 Nm/lb. in
= 20
± 20
± 30
100
300
600
600
150
20
10
11
30
CES
10
5
5
D1
± 100
max.
200
7.0
2.5
75
µs
°C
°C
°C
°C
W
µA
µA
nA
V
V
V
V
A
A
A
A
A
g
g
V
V
V
TO-247 (IXSH)
TO-3P (IXSQ)
G = Gate
E = Emitter
Features
• International standard package
• Guaranteed Short Circuit SOA
• Low V
• High current handling capability
• MOS Gate turn-on
• Fast fall time for switching speeds
Applications
• AC motor speed control
• Uninterruptible power supplies (UPS)
• Welding
Advantages
• High power density
capability
- for low on-state conduction losses
- drive simplicity
up to 20 kHz
G
V
I
V
C25
C
CES
G
CE(sat)
CE(sat)
E
C
E
C = Collector
TAB = Collector
= 600 V
= 20 A
= 2.5 V
DS99236(10/04)
(TAB)
(TAB)
Related parts for IXSQ10N60B2D1
IXSQ10N60B2D1 Summary of contents
... CES 750 µ GE(th CES CE CES ± GES 10A CE(sat © 2004 IXYS All rights reserved IXSH 10N60B2D1 IXSQ 10N60B2D1 D1 Maximum Ratings 600 = 1 MΩ 600 GE ± 20 ± 82Ω 0 CES = 125° 100 -55 ... +150 150 -55 ... +150 1.3/10 Nm/lb 300 ...
... A; -di/dt = 100 A/µ thJC Note 1: Pulse test, t ≤ 300 µs, duty cycle d ≤ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25° ...
Fig. 1. Output Characte ristics º 17V 0.5 1 1 Volts C E Fig. 3. Output Characteristics º ...
Fig. 7. Trans conductance 4.5 4 3.5 3 º - 2.5 º º 125 C 1 Amperes C Fig. 9. Dependence ...
Fig. 13. Depe nde nce of Turn-off Sw itching Tim e on Tem pe rature 340 t d(off) 320 I = 20A 300 30Ω G 280 V = ...
... Fig. 24. Transient thermal resistance junction-to-case NOTE: Fig Fig. 23 shows typical values IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 250 T = 100° ...
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