IXGH36N60A3D4 IXYS, IXGH36N60A3D4 Datasheet - Page 5

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IXGH36N60A3D4

Manufacturer Part Number
IXGH36N60A3D4
Description
IGBT 600V TO-247
Manufacturer
IXYS
Series
GenX3™r
Datasheet

Specifications of IXGH36N60A3D4

Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.4V @ 15V, 30A
Current - Collector (ic) (max)
36A
Power - Max
220W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247AD
Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Gate To Emitter Voltage (max)
±20V
Package Type
TO-247
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
75
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
36
Vce(sat), Max, Tj=25°c, Igbt, (v)
1.4
Tfi, Typ, Tj=25°c, Igbt, (ns)
325
Eoff, Typ, Tj=125°c, Igbt, (mj)
5.3
Rthjc, Max, Igbt, (°c/w)
0.56
If, Tj=110°c, Diode, (a)
10
Rthjc, Max, Diode, (ºc/w)
2.5
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
© 2008 IXYS CORPORATION, All rights reserved
11
10
12
11
10
850
800
750
700
650
600
550
500
450
400
350
300
250
9
8
7
6
5
4
3
2
1
9
8
7
6
5
4
3
2
15
0
Fig. 14. Inductive Switching Energy Loss vs.
Fig. 12. Inductive Switching Energy Loss vs.
15
Fig. 16. Inductive Turn-off Switching Times
E
T
V
E
R
V
J
off
CE
off
G
CE
10
= 125ºC , V
= 5Ω
20
T
= 400V
= 400V
J
20
= 125ºC
20
,
V
25
T
25
GE
J
30
E
= 25ºC
E
GE
on
= 15V
vs. Collector Current
on
T
Collector Current
= 15V
J
40
30
Gate Resistance
- - - -
- - - -
30
= 125ºC
I
I
C
R
C
- Amperes
G
R
V
50
- Amperes
t
CE
f
G
35
- Ohms
35
= 5Ω , V
= 400V
60
40
40
70
t
GE
d(off)
= 15V
T
45
45
80
I
J
C
= 25ºC
- - - -
= 60A
90
50
50
I
C
= 30A
100 110 120
I
C
= 15A
55
55
60
60
600
570
540
510
480
450
420
390
360
330
300
270
240
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
4.0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
11
10
800
750
700
650
600
550
500
450
400
350
300
950
900
850
800
750
700
650
600
550
500
450
9
8
7
6
5
4
3
2
1
25
Fig. 15. Inductive Turn-off Switching Times
25
Fig. 13. Inductive Switching Energy Loss vs.
0
Fig. 17. Inductive Turn-off Switching Times
E
R
V
off
CE
G
t
R
V
t
T
V
35
= 5Ω
J
f
G
CE
f
CE
10
= 400V
35
= 125ºC, V
= 5Ω , V
= 400V
= 400V
20
,
45
45
V
vs. Junction Temperature
GE
E
T
30
t
GE
T
Junction Temperature
d(off)
on
= 15V
J
vs. Gate Resistance
55
J
GE
t
- Degrees Centigrade
55
= 15V
d(off)
- Degrees Centigrade
- - - -
40
= 15V
- - - -
R
65
- - - -
65
G
50
- Ohms
IXGH36N60A3D4
75
60
75
I
`
C
70
= 15A, 30A
85
85
80
I
C
95
95
= 15A, 30A, 60A
90 100 110 120
105
105
I
I
I
C
C
C
I
= 60A
= 30A
= 15A
C
115
= 60A
115
125
125
1300
1200
1100
1000
900
800
700
600
500
400
300
640
600
560
520
480
440
400
360
320
280
240
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0

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