IXGP28N120B IXYS, IXGP28N120B Datasheet - Page 2

• Manufacturer Part Number: IXGP28N120B
• Description: IGBT 1200V TO-220
• Manufacturer: IXYS

Specifications of IXGP28N120B

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.5V @ 15V, 25A
• Current - Collector (ic) (max): 50A
• Power - Max: 250W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 50A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-220
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
Symbol
g
C
C
C
Q
Q
Q
t
t
t
t
E
t
t
E
t
t
E
R
R
of the following U.S. patents:
d(on)
d(off)
d(on)
d(off)
ri
fi
ri
fi
fs
off
on
off
thJC
thCK
ies
oes
res
g
ge
gc
Inductive load, T
I
V
Test Conditions
I
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
V
I
Inductive load, T
I
V
C
C
C
C
CE
CE
CE
= 28A, V
= 28A, V
= 28 A, V
= 0.8 V
= 25 V, V
= 0.8 V
= 28A; V
GE
GE
CES
GE
CES
= 15 V
GE
= 15 V, V
CE
, R
= 15 V
, R
= 0 V, f = 1 MHz
= 10 V,
G
G
J
J
= R
= R
= 125° ° ° ° ° C
= 25° ° ° ° ° C
off
off
CE
= 5 Ω
= 5 Ω
= 0.5 V
(T
J
CES
= 25°C, unless otherwise specified)
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
min.
18
Characteristic Values
2700
0.25
typ.
170
180
160
250
300
2.0
1.4
8.0
25
60
92
15
30
30
20
35
28
max.
280
320
5.0 mJ
0.5 K/W
K/W
mJ
mJ
nC
nC
nC
pF
pF
pF
n s
n s
n s
n s
n s
n s
n s
n s
S
TO-220 Outline
Pins: 1 - Gate
IXGP 28N120B
3 - Source
2 - Drain
4 - Drain
6,534,343