IXGH30N60C3D1 IXYS, IXGH30N60C3D1 Datasheet - Page 3

• Manufacturer Part Number: IXGH30N60C3D1
• Description: IGBT 600V 60A GENX3 W/DIO TO-247
• Manufacturer: IXYS
• Series: GenX3™r

Specifications of IXGH30N60C3D1

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 3V @ 15V, 20A
• Current - Collector (ic) (max): 60A
• Power - Max: 220W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 60
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 30
• Vce(sat), Max, Tj=25°c, Igbt, (v): 3.0
• Tfi, Typ, Tj=25°c, Igbt, (ns): 47
• Eoff, Typ, Tj=125°c, Igbt, (mj): 0.33
• Rthjc, Max, Igbt, (°c/w): 0.56
• If, Tj=110°c, Diode, (a): 30
• Rthjc, Max, Diode, (ºc/w): 0.90
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Compliant

© 2008 IXYS CORPORATION, All rights reserved
5.5
5.0
4.5
4.0
3.5
3.0
2.5
40
35
30
25
20
15
10
40
35
30
25
20
15
10
5
0
5
0
0.0
0.0
7
0.4
0.4
8
Fig. 5. Collector-to-Emitter Voltage
Fig. 1. Output Characteristics
Fig. 3. Output Characteristics
0.8
vs. Gate-to-Emitter Voltage
0.8
9
1.2
1.2
10
V
I
CE
V
C
V
1.6
@ 125ºC
CE
@ 25ºC
= 40A
GE
- Volts
20A
10A
- Volts
1.6
11
- Volts
V
GE
2.0
V
= 15V
GE
13V
11V
2.0
12
= 15V
2.4
13V
2.4
13
T
2.8
J
= 25ºC
11V
2.8
14
3.2
9V
7V
7V
9V
3.6
3.2
15
180
160
140
120
100
1.1
1.0
0.9
0.8
0.7
0.6
0.5
80
60
40
20
70
60
50
40
30
20
10
0
0
25
0
5
Fig. 2. Extended Output Characteristics
2
6
Fig. 4. Dependence of V
50
4
Fig. 6. Input Admittance
Junction Temperature
6
T
J
7
- Degrees Centigrade
T
V
J
75
8
CE
= 125ºC
V
@ 25ºC
- 40ºC
GE
- Volts
25ºC
10
8
- Volts
I
C
IXGH30N60C3D1
IXGT30N60C3D1
I
= 10A
C
I
100
12
= 20A
C
= 40A
9
CE(sat)
14
V
125
GE
16
V
on
GE
10
= 15V
13V
11V
= 15V
9V
7V
18
150
20
11